MBE growth of hexagonal InN films on sapphire with different initial growth stages

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 247-252

  Mamutin, V V ^a   Vekshin, V A ^a   Davydov, V Yu ^a   Ratnikov, V V ^a   Shubina, T V ^a   Ivanov, S V ^a   Kopev, P S ^a   Karlsteen, M ^b   Soderwall U ^b   Willander, M ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CARRIER MOBILITY; DEPOSITION; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION;

ELECTRON CONCENTRATION; HALL EFFECT MEASUREMENTS; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING FILMS;

EID: 0033221996     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<247::AID-PSSA247>3.0.CO;2-I     Document Type: Article

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