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Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 15-22

Present status of InGaN-based laser diodes

(1) Nakamura, S a

a NICHIA CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CONTINUOUS WAVE LASERS; EPITAXIAL GROWTH; HETEROJUNCTIONS; NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE;

SEMICONDUCTOR LASERS;

EID: 0033221343 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/(SICI)1521-396X(199911)176:1<15::AID-PSSA15>3.0.CO;2-6 Document Type: Article

Times cited : (31)

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