Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy

Applied Physics Letters

Volumn 81, Issue 21, 2002, Pages 3960-3962

  Ng, Y F ^a   Cao, Y G ^a   Xie, M H ^a   Wang, X L ^a,b   Tong, S Y ^a,c  

^a The University of Hong Kong   (Hong Kong)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL RELAXATION; DEPOSITION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; OSCILLATIONS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN;

SUBSTRATE TEMPERATURES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037132248     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1523638     Document Type: Article

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