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Applied Physics Letters

Volumn 83, Issue 17, 2003, Pages 3468-3470

Growth of cubic InN on r-plane sapphire

(9) Cimalla, V a Pezoldt, J a Ecke, G a Kosiba, R a Ambacher, O a Spiess L a Teichert, G a Lu, H b Schaff, W J b

a ILMENAU UNIVERSITY OF TECHNOLOGY (Germany)

b School of Chemical and Molecular Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; MOLECULAR ORIENTATION; SAPPHIRE; TWINNING; X RAY DIFFRACTION ANALYSIS;

LATTICE MISMATCH; METASTABLE CUBIC PHASES;

INDIUM COMPOUNDS;

EID: 0242498460 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1622985 Document Type: Article

Times cited : (82)

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