SCOPUS 정보 검색 플랫폼

Volumn 36, Issue 4-6, 2004, Pages 509-515

Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE

(8) Komninou, Ph a Kehagias, Th a Delimitis, A a Dimitrakopulos, G P a Kioseoglou, J a Dimakis, E b,c Georgakilas, A b,c Karakostas, Th a

a ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

b UNIVERSITY OF CRETE (Greece)

c INSTITUTE OF ELECTRONIC STRUCTURE AND LASER (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ELECTRON DIFFRACTION; FILM GROWTH; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; RELAXATION PROCESSES; THIN FILMS;

INN; MISFIT DISLOCATION; RADIO FREQUENCY MOLECULAR BEAM EPITAXY; STRAIN RELAXATION;

INDIUM COMPOUNDS;

EID: 9944229070 PISSN: 07496036 EISSN: None Source Type: Journal
DOI: 10.1016/j.spmi.2004.09.011 Document Type: Article

Times cited : (11)

References (11)

1
- 0030410873
- S.N. Mohammad, H. Morkoc, Prog. Quantum Electron. 20 (1996) 361.
- (1996) Prog. Quantum Electron. , vol.20 , pp. 361
- Mohammad, S.N.¹ Morkoc, H.²

2
- 0027577673
- I. Akasaki, H. Amano, N. Koide, M. Kotaki, K. Manabe, Physica B 185 (1993) 428.
- (1993) Physica B , vol.185 , pp. 428
- Akasaki, I.¹ Amano, H.² Koide, N.³ Kotaki, M.⁴ Manabe, K.⁵

3
- 4544308524
- T. Araki, S. Ueta, K. Mizuo, T. Yamaguchi, Y. Saito, Y. Nanishi, Phys. Status Solidi c (2003) 1.
- (2003) Phys. Status Solidi c , pp. 1
- Araki, T.¹ Ueta, S.² Mizuo, K.³ Yamaguchi, T.⁴ Saito, Y.⁵ Nanishi, Y.⁶

4
- 0141608080
- A.G. Bhuiyan, A. Hashimoto, A. Yamamoto, J. Appl. Phys. 94 (5) (2003) 2779.
- (2003) J. Appl. Phys. , vol.94 , Issue.5 , pp. 2779
- Bhuiyan, A.G.¹ Hashimoto, A.² Yamamoto, A.³

5
- 9944253565
- J. Pankove, T.D. Moustakas (Eds.), Academic Press
- A. Trampert, O. Brandt, K.H. Ploog, in: J. Pankove, T.D. Moustakas (Eds.), Gallium Nitride (GaN) I Semiconductors and Semimetals, vol. 50, Academic Press, 1998, p. 175.
- (1998) Gallium Nitride (GaN) I Semiconductors and Semimetals , vol.50 , pp. 175
- Trampert, A.¹ Brandt, O.² Ploog, K.H.³

6
- 18244391420
- Nitride semiconductors
- P. Ruterana, M. Albrecht, J. Neugebauer (Eds.), VCH, Weinheim
- A. Georgakilas, H.M. Ng, Ph. Komninou, in: P. Ruterana, M. Albrecht, J. Neugebauer (Eds.), Nitride Semiconductors, Handbook on Materials and Devices, VCH, Weinheim, 2003, pp. 107-191.
- (2003) Handbook on Materials and Devices , pp. 107-191
- Georgakilas, A.¹ Ng, H.M.² Komninou, Ph.³

7
- 1142267823
- B. Gil (Ed.), Oxford Univ. Press, New York
- F. A. Ponce, in: B. Gil (Ed.), Group III Nitride Semiconductors, Oxford Univ. Press, New York, 1998, p. 127.
- (1998) Group III Nitride Semiconductors , pp. 127
- Ponce, F.A.¹

8
- 84875102240
- V. Cimalla, Ch. Förster, G. Kittler, I. Cimalla, R. Kosiba, G. Ecke, O. Ambacher, R. Goldhahn, S. Shokhovets, A. Georgakilas, H. Lu, W. Schaff, Phys. Status Solidi c (2003) 2818.
- (2003) Phys. Status Solidi c , pp. 2818
- Cimalla, V.¹ Förster, Ch.² Kittler, G.³ Cimalla, I.⁴ Kosiba, R.⁵ Ecke, G.⁶ Ambacher, O.⁷ Goldhahn, R.⁸ Shokhovets, S.⁹ Georgakilas, A.¹⁰ Lu, H.¹¹ Schaff, W.¹²

9
- 79955990967
- D.C. Look, H. Lu, W.J. Schaff, J. Jasinski, Z. Liliental-Weber, Appl. Phys. Lett. 80 (2002) 258.
- (2002) Appl. Phys. Lett. , vol.80 , pp. 258
- Look, D.C.¹ Lu, H.² Schaff, W.J.³ Jasinski, J.⁴ Liliental-Weber, Z.⁵

10
- 0142229556
- C.J. Lu, L.A. Bendersky, H. Lu, W.J. Schaff, Appl. Phys. Lett. 83 (14) (2003) 2817.
- (2003) Appl. Phys. Lett. , vol.83 , Issue.14 , pp. 2817
- Lu, C.J.¹ Bendersky, L.A.² Lu, H.³ Schaff, W.J.⁴

11
- 0035891341
- Th. Kehagias, Ph. Komninou, G. Nouet, P. Ruterana, Th. Karakostas, Phys. Rev. B 64 (2001) 195329.
- (2001) Phys. Rev. B , vol.64 , pp. 195329
- Kehagias, Th.¹ Komninou, Ph.² Nouet, G.³ Ruterana, P.⁴ Karakostas, Th.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.