Nanoionics-based three-terminal synaptic device using zinc oxide

ACS Applied Materials and Interfaces

Volumn 9, Issue 2, 2017, Pages 1609-1618

  Pillai, Premlal Balakrishna ^a   De Souza, Maria Merlyne ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Memory TFTs; Oxygen vacancies; Synaptic thin film transistors; Tantalum oxide; Zinc oxide

Indexed keywords

ELECTROLYTES; FIELD EFFECT TRANSISTORS; II-VI SEMICONDUCTORS; OXIDE MINERALS; OXYGEN VACANCIES; RANDOM ACCESS STORAGE; TANTALUM OXIDES; THIN FILM TRANSISTORS; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

INDEPENDENT CONTROL; INORGANIC MATERIALS; INTERCONNECT DENSITIES; LIQUID ELECTROLYTES; RESISTIVE RANDOM ACCESS MEMORY; SEMICONDUCTOR CHANNELS; SIGNAL TRANSMISSION; THIN-FILM TRANSISTOR (TFTS);

THIN FILM CIRCUITS;

EID: 85028374982     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.6b13746     Document Type: Article

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