-
1
-
-
84862816343
-
3 Gate Dielectric
-
10.1109/LED.2012.2185774
-
3 Gate Dielectric.," IEEE electron device letters 33, 552 (2012). 10.1109/LED.2012.2185774
-
(2012)
IEEE Electron Device Letters
, vol.33
, pp. 552
-
-
Chien-Hung, W.1
Kow-Ming, C.2
Sung-Hung, H.3
I-Chung, D.4
Chin-Jyi, W.5
Wei-Han, C.6
Chia-Chiang, C.7
-
3
-
-
79952406038
-
Modeling of low-voltage oxide-based electric-double-layer thin-film transistors fabricated at room temperature
-
10.1063/1.3555333
-
Mingzhi Dai, Guodong Wu, Yue Yang, Jie Jiang, Li Li, and Qing Wan, " Modeling of low-voltage oxide-based electric-double-layer thin-film transistors fabricated at room temperature.," Applied Physics Letters 98, 093506 (2011). 10.1063/1.3555333
-
(2011)
Applied Physics Letters
, vol.98
, pp. 093506
-
-
Dai, M.1
Wu, G.2
Yang, Y.3
Jiang, J.4
Li, L.5
Wan, Q.6
-
4
-
-
23044480892
-
Gate dielectrics for organic field-effect transistors: New opportunities for organic electronics
-
DOI 10.1002/adma.200500517
-
Antonio Facchetti, Myung-Han Yoon and Tobin J. Marks, " Gate Dielectrics for Organic Field-Effect Transistors: New Opportunities for Organic Electronics.," Advanced Materials 17, 1705 (2005). 10.1002/adma.200500517 (Pubitemid 41055422)
-
(2005)
Advanced Materials
, vol.17
, Issue.14
, pp. 1705-1725
-
-
Facchetti, A.1
Yoon, M.-H.2
Marks, T.J.3
-
5
-
-
34249047737
-
Polymer electrolyte-gated organic field-effect transistors: Low-voltage, high-current switches for organic electronics and testbeds for probing electrical transport at high charge carrier density
-
DOI 10.1021/ja0708767
-
Matthew J. Panzer and C. Daniel Frisbie, " Polymer Electrolyte-Gated Organic Field-Effect Transisitor: Low-Voltage, High-Current Switches for Organic Electronics and Testbeds for Probing Electrial Transport at High Charge Carrier Density.," J. Am. Chem. Soc. 129, 6599 (2007). 10.1021/ja0708767 (Pubitemid 46799358)
-
(2007)
Journal of the American Chemical Society
, vol.129
, Issue.20
, pp. 6599-6607
-
-
Panzer, M.J.1
Frisbie, C.D.2
-
6
-
-
79953038974
-
Flexible Low-Voltage Electric-Double-Layer TFTs Self-Assembled on Paper Substrates
-
10.1109/LED.2011.2107550
-
Aixia Lu, Mingzhi Dai, Jia Sun, Jie Jiang, and Qing Wan, " Flexible Low-Voltage Electric-Double-Layer TFTs Self-Assembled on Paper Substrates.," IEEE electron device letters 32, 518 (2011). 10.1109/LED.2011.2107550
-
(2011)
IEEE Electron Device Letters
, vol.32
, pp. 518
-
-
Lu, A.1
Dai, M.2
Sun, J.3
Jiang, J.4
Wan, Q.5
-
8
-
-
33846448724
-
Low-voltage polymer field-effect transistors gated via a proton conductor
-
DOI 10.1002/adma.200600871
-
Lars Herlogsson, Xavier Crispin, Nathaniel D. Robinson, Mats Sandberg, Olle-Jonny Hagel, Göran Gustafsson, and Magnus Berggren, " Low-Voltage Polymer Field-Effect Transistors Gated via a Proton Conductor.," Adv. Mater. 19, 97 (2007). 10.1002/adma.200600871 (Pubitemid 46144817)
-
(2007)
Advanced Materials
, vol.19
, Issue.1
, pp. 97-101
-
-
Herlogsson, L.1
Crispin, X.2
Robinson, N.D.3
Sandberg, M.4
Hagel, O.-J.5
Gustafsson, G.6
Berggren, M.7
-
9
-
-
84856262348
-
Low-Voltage Oxide-Based TFTs Self-Assembled on Paper Substrates with Tunable Threshold Voltage
-
10.1109/TED.2011.2173574
-
Jia Sun, Jie Jiang, Aixia Lu, Wei Dou, Bin Zhou, and Qing Wan, " Low-Voltage Oxide-Based TFTs Self-Assembled on Paper Substrates With Tunable Threshold Voltage.," IEEE on electron device letters 59, 380 (2012). 10.1109/TED.2011.2173574
-
(2012)
IEEE on Electron Device Letters
, vol.59
, pp. 380
-
-
Sun, J.1
Jiang, J.2
Lu, A.3
Dou, W.4
Zhou, B.5
Wan, Q.6
-
10
-
-
79953051133
-
Self-assembled in-plane gate oxide-based homojunction thin-film transistors
-
10.1109/LED.2010.2104133
-
Jie Jiang, Jia Sun, Bin Zhou, Aixia Lu and Qing Wan, " Self-assembled in-plane gate oxide-based homojunction thin-film transistors.," IEEE electron device letters 32, 500 (2011). 10.1109/LED.2010.2104133
-
(2011)
IEEE Electron Device Letters
, vol.32
, pp. 500
-
-
Jiang, J.1
Sun, J.2
Zhou, B.3
Lu, A.4
Wan, Q.5
-
11
-
-
33645564244
-
Proton Conductivity of Mesoporous Silica Incorporated with Phosphorus under High Water Vapor Pressures up to 150°C
-
10.2109/jcersj.114.303
-
Satoshi Suzuki, Yoichiro Nozaki, Toyoli Okummura, and Masaru Miyayama, " Proton Conductivity of Mesoporous Silica Incorporated with Phosphorus under High Water Vapor Pressures up to 150°C.," Journal of the Ceramic Society of Japan 114, 303 (2006). 10.2109/jcersj.114.303
-
(2006)
Journal of the Ceramic Society of Japan
, vol.114
, pp. 303
-
-
Suzuki, S.1
Nozaki, Y.2
Okummura, T.3
Miyayama, M.4
-
12
-
-
84858290570
-
2 ceramic nanoporous substrate-reinforced sulfonated poly (arylene ether sulfone) composite membranes for proton exchange membrane fuel cells
-
10.1016/j.ijhydene.2011.06.085
-
2 ceramic nanoporous substrate-reinforced sulfonated poly (arylene ether sulfone) composite membranes for proton exchange membrane fuel cells.," International journal of hydrogen energy 37, 6189 (2012). 10.1016/j.ijhydene.2011.06.085
-
(2012)
International Journal of Hydrogen Energy
, vol.37
, pp. 6189
-
-
Seol, J.-H.1
Won, J.-H.2
Yoon, K.-S.3
Hong, Y.T.4
-
13
-
-
79961028789
-
Proton transport, water uptake and hydrogen permeability of nanoporous hematite ceramic membranes
-
10.1016/j.jpowsour.2011.06.018
-
M. T. Colomer, " Proton transport, water uptake and hydrogen permeability of nanoporous hematite ceramic membranes.," Journal of Power Sources 196, 8280 (2011). 10.1016/j.jpowsour.2011.06.018
-
(2011)
Journal of Power Sources
, vol.196
, pp. 8280
-
-
Colomer, M.T.1
-
14
-
-
77956463196
-
2 composite systems
-
10.1016/j.electacta.2010.07.006
-
2 composite systems.," Flectrochimica Acta 55, 7298 (2010). 10.1016/j.electacta.2010.07.006
-
(2010)
Flectrochimica Acta
, vol.55
, pp. 7298
-
-
Li, Z.1
-
15
-
-
66549118442
-
Effect of the hydrophobicity and thickness of polymer gate dielectrics on the hysteresis behavior of pentacene-based field-effect transistors
-
10.1063/1.3131664
-
Se Hyun Kim, Sooji Nam, Jaeyoung Jang, Kipyo Hong, Chanwoo Yang, Dae Sung Chung, Chan Eon Park, and Woon-Seop Choi, " Effect of the hydrophobicity and thickness of polymer gate dielectrics on the hysteresis behavior of pentacene-based field-effect transistors.," Journal of applied physics 105, 104509 (2009). 10.1063/1.3131664
-
(2009)
Journal of Applied Physics
, vol.105
, pp. 104509
-
-
Kim, S.H.1
Nam, S.2
Jang, J.3
Hong, K.4
Yang, C.5
Chung, D.S.6
Park, C.E.7
Choi, W.-S.8
-
16
-
-
70350464750
-
Insulator Polarization Mechanisms in Polyelectrolyte-Gated Organic Field-Effect Transistors
-
10.1002/adfm.200900588
-
Oscar Larsson, Elias Said, Magnus Berggren, and Xavier Crispin, " Insulator Polarization Mechanisms in Polyelectrolyte-Gated Organic Field-Effect Transistors.," Adv. Funct. Mater. 19, 3334 (2009). 10.1002/adfm.200900588
-
(2009)
Adv. Funct. Mater.
, vol.19
, pp. 3334
-
-
Larsson, O.1
Said, E.2
Berggren, M.3
Crispin, X.4
-
18
-
-
84857040894
-
Carbon nanotubes' nanocomposite in humidity sensors
-
10.1016/j.sse.2011.11.028
-
Mutabar Shah, Zubir Ahmad, K. Sulaiman, Kh. S. Karimov, and M. H. Sayyad, " Carbon nanotubes' nanocomposite in humidity sensors.," Solid-Stats Electronics 59, 18 (2012). 10.1016/j.sse.2011.11.028
-
(2012)
Solid-Stats Electronics
, vol.59
, pp. 18
-
-
Shah, M.1
Ahmad, Z.2
Sulaiman, K.3
Karimov, Kh.S.4
Sayyad, M.H.5
-
20
-
-
67649261772
-
Self-Supported Ion-Conductive Membrane-Based Transistors
-
10.1002/adma.200801817
-
Nikolai J. Kaihovirta, Carl-Johan Wikman, Tapio Mäkelä, Carl-Eric Wilén, and Ronald Österbacka, " Self-Supported Ion-Conductive Membrane-Based Transistors.," Advanced Materials 21, 2520 (2009). 10.1002/adma.200801817
-
(2009)
Advanced Materials
, vol.21
, pp. 2520
-
-
Kaihovirta, N.J.1
Wikman, C.-J.2
Mäkelä, T.3
Wilén, C.-E.4
Österbacka, R.5
-
21
-
-
70350464750
-
Insulator polarization mechanisms in polyelectrolyte-gated organic field-effect transistors
-
10.1002/adfm.200900588
-
Oscar Larson, Elias Said, Magunus Berggren, and Xavier Crispin, " Insulator polarization mechanisms in polyelectrolyte-gated organic field-effect transistors.," Adv. Funct. Mater. 19, 3334 (2009) 10.1002/adfm.200900588
-
(2009)
Adv. Funct. Mater.
, vol.19
, pp. 3334
-
-
Larson, O.1
Said, E.2
Berggren, M.3
Crispin, X.4
-
22
-
-
84860673538
-
Effects of humidity on the electrical characteristics of ZnO nanowire devices
-
10.1002/pssa.201127460
-
J. Kim, H. Jeong, Y. H. Ahn, and J.-Y. Park, " Effects of humidity on the electrical characteristics of ZnO nanowire devices.," Phys. Status Solidi A. 209, 972 (2012). 10.1002/pssa.201127460
-
(2012)
Phys. Status Solidi A.
, vol.209
, pp. 972
-
-
Kim, J.1
Jeong, H.2
Ahn, Y.H.3
Park, J.-Y.4
-
23
-
-
84862888452
-
3 Gas Sensitivity of Bottom-Gate Graphene FETs Prepared by ICP-CVD
-
Senior Member, IEEE, ",", 10.1109/LED.2012.2193867
-
3 Gas Sensitivity of Bottom-Gate Graphene FETs Prepared by ICP-CVD.," IEEE electron device letters 33, 1084 (2012). 10.1109/LED.2012.2193867
-
(2012)
IEEE Electron Device Letters
, vol.33
, pp. 1084
-
-
Kim, C.-H.1
Yoo, S.-W.2
Nam, D.-W.3
Seo, S.4
Lee, J.-H.5
|