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Volumn 43, Issue 11, 1996, Pages 1972-1980

Single-transistor silicon synapse

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; GATES (TRANSISTOR); HOT CARRIERS; LEARNING SYSTEMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR STORAGE;

EID: 0030285698     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.543035     Document Type: Article
Times cited : (265)

References (18)
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    • P. Churchland T. Sejnowski The Computational Brain 1993 MIT Press MA, Cambridge
    • (1993)
    • Churchland, P.1    Sejnowski, T.2
  • 2
    • 85176689542 scopus 로고
    • MIT Press MA, Cambridge
    • P. Hasler C. Diorio B. A. Minch C. Mead Single transistor learning synapses Advances in Neural Information Processing Systems 7 817 824 1995 MIT Press MA, Cambridge
    • (1995) , pp. 817-824
    • Hasler, P.1    Diorio, C.2    Minch, B.A.3    Mead, C.4
  • 3
    • 0029190791 scopus 로고
    • P. Hasler C. Diorio B. A. Minch C. Mead Single transistor learning synapses with long term storage IEEE Int. Symp. on Circuits and Systems 3 1660 1663 1995 3941 11414 523729
    • (1995) , vol.3 , pp. 1660-1663
    • Hasler, P.1    Diorio, C.2    Minch, B.A.3    Mead, C.4
  • 4
    • 85176674124 scopus 로고
    • C. Diorio P. Hasler B. A. Minch C. Mead A single transistor silicon MOS device for long term learning 7 Mar. 1995 U.S. Patent Office Serial no. 08/399966
    • (1995)
    • Diorio, C.1    Hasler, P.2    Minch, B.A.3    Mead, C.4
  • 5
    • 0029181030 scopus 로고
    • C. Diorio P. Hasler B. A. Minch C. Mead A high-resolution nonvolatile analog memory cell IEEE Int. Symp. on Circuits and Systems 3 2233 2236 1995 3941 11414 523872
    • (1995) , vol.3 , pp. 2233-2236
    • Diorio, C.1    Hasler, P.2    Minch, B.A.3    Mead, C.4
  • 6
    • 0010533294 scopus 로고
    • F. Masuoka R. Shirota K. Sakui Reviews and prospects of nonvolatile semiconductor memories IEICE Trans. E74 868 874 Apr. 1991
    • (1991) , vol.E74 , pp. 868-874
    • Masuoka, F.1    Shirota, R.2    Sakui, K.3
  • 7
    • 36849097956 scopus 로고
    • M. Lenzlinger E. H. Snow Fowler-Nordheim tunneling into thermally grown SiO $_2$ J. Appl. Phys. 40 6 278 283 Jan. 1969
    • (1969) , vol.40 , Issue.6 , pp. 278-283
    • Lenzlinger, M.1    Snow, E.H.2
  • 8
    • 85176682111 scopus 로고
    • Addison-Wesley MA, Reading
    • C. Mead Analog VLSI and Neural Systems 1989 Addison-Wesley MA, Reading
    • (1989)
    • Mead, C.1
  • 9
    • 0026173510 scopus 로고
    • J. J. Sanchez T. A. DeMassa Review of carrier injection in the silicon/silicon-dioxide system IEE Proc.-G 138 3 377 389 June 1991 2211 6544 258030
    • (1991) , vol.138 , Issue.3 , pp. 377-389
    • Sanchez, J.J.1    DeMassa, T.A.2
  • 10
    • 0009667182 scopus 로고
    • C. R. Crowell S. M. Sze Temperature dependence of avalanche multiplication in semiconductors Appl. Phys. Lett. 9 6 242 244 Sept. 1966
    • (1966) , vol.9 , Issue.6 , pp. 242-244
    • Crowell, C.R.1    Sze, S.M.2
  • 11
    • 85176694318 scopus 로고
    • Wiley New York
    • A. S. Grove Physics and Technology of Semiconductor Devices 1967 Wiley New York
    • (1967)
    • Grove, A.S.1
  • 12
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    • C. C. Enz F. Krummenacher E. A. Vittoz An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications Analog Integ. Circ. Sig. Proc. 8 83 114 1995
    • (1995) , vol.8 , pp. 83-114
    • Enz, C.C.1    Krummenacher, F.2    Vittoz, E.A.3
  • 13
    • 85176666651 scopus 로고
    • M. Ismail T. Fiez McGraw-Hill New York
    • M. Ismail T. Fiez Neural information processing II Analog VLSI Signal and Information Processing 358 413 1994 McGraw-Hill New York
    • (1994) , pp. 358-413
  • 14
    • 0002861764 scopus 로고
    • Pergamon Press
    • W. Shockley Problems related to p-n junctions in silicon Solid-State Electron. 2 1 35 67 1961 Pergamon Press
    • (1961) , vol.2 , Issue.1 , pp. 35-67
    • Shockley, W.1
  • 15
    • 0021483045 scopus 로고
    • S. Tam P. Ko C. Hu Lucky-electron model of channel hot-electron injection in MOSFET's IEEE Trans. Electron Devices ED-31 9 1116 1125 Sept. 1984
    • (1984) , vol.ED-31 , Issue.9 , pp. 1116-1125
    • Tam, S.1    Ko, P.2    Hu, C.3
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    • S. M. Sze Physics of Semiconductor Devices 1981 Wiley New York
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  • 17
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    • C. Mead Scaling of MOS technology to submicrometer feature sizes J. VLSI Sig. Proc. 8 9 25 1994
    • (1994) , vol.8 , pp. 9-25
    • Mead, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.