Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors

ACS Applied Materials and Interfaces

Volumn 8, Issue 15, 2016, Pages 9762-9768

  Wan, Chang Jin ^a,b   Liu, Yang Hui ^b   Zhu, Li Qiang ^b   Feng, Ping ^a   Shi, Yi ^a   Wan, Qing ^a,b  

^a NANJING UNIVERSITY   (China)

^b NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

Author keywords

artificial synapses; electric double layer modulation; neuromorphic systems; solution gated transistors; synaptic plasticity regulation

Indexed keywords

ELECTROCHEMICAL ELECTRODES; ELECTROCHEMISTRY; GALLIUM; HIGH PASS FILTERS; INDIUM; MODULATION; RECONFIGURABLE HARDWARE; SOLUTIONS; ZINC; ZINC OXIDE;

ARTIFICIAL SYNAPSES; ELECTRIC DOUBLE LAYER; ELECTRIC DOUBLE-LAYER TRANSISTORS; FUNDAMENTAL MECHANISMS; INDIUM GALLIUM ZINC OXIDES; NEUROMORPHIC SYSTEMS; SHORT-TERM SYNAPTIC PLASTICITY; SYNAPTIC PLASTICITY;

TRANSISTORS;

GALLIUM; INDIUM; SOLUTION AND SOLUBILITY; ZINC OXIDE;

DRUG EFFECTS; ELECTRICITY; EXCITATORY POSTSYNAPTIC POTENTIAL; NERVE CELL PLASTICITY; SOLUTION AND SOLUBILITY; TRANSISTOR;

ELECTRICITY; EXCITATORY POSTSYNAPTIC POTENTIALS; GALLIUM; INDIUM; NEURONAL PLASTICITY; SOLUTIONS; TRANSISTORS, ELECTRONIC; ZINC OXIDE;

EID: 84966393693     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b12726     Document Type: Article

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