Three-terminal ferroelectric synapse device with concurrent learning function for artificial neural networks

Journal of Applied Physics

Volumn 111, Issue 12, 2012, Pages

  Nishitani, Y ^a   Kaneko, Y ^a   Ueda, M ^a   Morie, T ^b   Fujii, E ^a  

^a PANASONIC CORPORATION   (Japan)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CONDUCTANCE; DENSITY OF ELECTRONS; GATE VOLTAGES; HUMAN BRAIN; LEARNING FUNCTIONS; NON-VOLATILE; OXIDE MATERIALS; PZT; PZT FILM; SAMPLING CIRCUITS; SIGNAL TRANSMISSION; SPIKE TIMING; SPIKE-TIMING-DEPENDENT SYNAPTIC PLASTICITIES; SYNAPTIC WEIGHT; WEIGHT UPDATE; ZNO;

FIELD EFFECT TRANSISTORS; NEURAL NETWORKS; POLARIZATION; ZIRCONIUM;

FERROELECTRICITY;

EID: 84863522544     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4729915     Document Type: Article

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