Nonvolatile memory thin-film transistors using biodegradable chicken albumen gate insulator and oxide semiconductor channel on eco-friendly paper substrate

ACS Applied Materials and Interfaces

Volumn 7, Issue 8, 2015, Pages 4869-4874

  Kim, So Jung ^a   Jeon, Da Bin ^a   Park, Jung Ho ^a   Ryu, Min Ki ^b   Yang, Jong Heon ^b   Hwang, Chi Sun ^b   Kim, Gi Heon ^b   Yoon, Sung Min ^a  

^a Kyung Hee University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

chicken albumen dielectric; eco friendly device; nonvolatile memory; oxide semiconductor; paper substrate

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ANIMALS; ATOMIC LAYER DEPOSITION; DIELECTRIC PROPERTIES; ENVIRONMENTAL PROTECTION; INDIUM COMPOUNDS; NONVOLATILE STORAGE; OXIDE SEMICONDUCTORS; PAPER; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS;

DEVICE CHARACTERISTICS; ECO-FRIENDLY; NON-VOLATILE MEMORY; PAPER SUBSTRATE; PROCESS COMPATIBILITY; RESIDUAL POLARIZATION; SEMICONDUCTOR CHANNELS; THIN-FILM TRANSISTOR (TFTS);

SUBSTRATES;

PAPER; SUBSTRATES; TRANSISTORS;

ALUMINUM OXIDE; OVALBUMIN; POLYPROPYLENE;

ANIMAL; ATOMIC FORCE MICROSCOPY; CHEMISTRY; CHICKEN; ELECTRICITY; EQUIPMENT DESIGN; METABOLISM; PAPER; SEMICONDUCTOR;

ALUMINUM OXIDE; ANIMALS; CHICKENS; ELECTRICITY; EQUIPMENT DESIGN; MICROSCOPY, ATOMIC FORCE; OVALBUMIN; PAPER; POLYPROPYLENES; TRANSISTORS, ELECTRONIC;

EID: 84924253710     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am508834y     Document Type: Article

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