Reliability perspective of high-k gate stack assessed by temperature dependence of dielectric breakdown

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 34-35

  Tokada, Kenj ^a   Horikawa, Tsuyoshi ^b   Satake, Hideki ^a,e   Inumiya, Seiji ^c,e   Akasaka, Yasushi ^c,f   Ootsuka, Fumio ^c   Nara, Yasuo ^c   Ota, Hiroyuki ^b   Nabatame, Toshihide ^a   Toriumi, Akira ^b,d  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

^e TOSHIBA CORPORATION   (Japan)

^f TOKYO ELECTRON LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON COMPOUNDS;

DIELECTRIC BREAKDOWN (DB); HIGH K GATE STACKS; TEMPERATURE DEPENDENCES; VLSI TECHNOLOGIES;

ELECTRIC BREAKDOWN;

EID: 47249091756     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339716     Document Type: Conference Paper

References (9)

1. T. Yamaguchi et al., SSDM (2004) 78.
2. A. Shanware et al., IEDM (2001) 137.
3. T. Yamaguchi et al., IRPS (2005) 67.
4. K. Okada et al., IEDM (2004) 721.
5. K. Okada et al., SSDM (2006) 1124.
6. K. Okada et al., ECS Trans. 1 (2005) 179.
7. H. Satake et al., Appl. Phys. Lett. 66 (1995) 3516.
8. B. Kaczer et al., Elec. Dev. 47(2000) 1514.
9. E. Wu et al., Microelec. Eng. 59 (2001) 25.