Multi-vibrational hydrogen release: Physical origin of T bd,Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides

Microelectronics Reliability

Volumn 45, Issue 12, 2005, Pages 1842-1854

  Ribes, G ^a,b   Bruyere S ^a   Denais, M ^a,c   Monsieur, F ^a   Huard, V ^d   Roy, D ^a   Ghibaudo, G ^b  

^a STMICROELECTRONICS   (France)

^b Grenoble INP Phelma   (France)

^c AIX MARSEILLE UNIVERSITÉ   (France)

^d NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; HYDROGEN; MATHEMATICAL MODELS; SILICA;

CURRENT DEPENDENCE; MULTI-VIBRATIONAL EXCITATION; MULTI-VIBRATIONAL HYDROGEN RELEASE (MVHR) MODELS;

GATES (TRANSISTOR);

EID: 27744451545     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.03.009     Document Type: Article

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