Charge Trapping at Deep States in Hf-Silicate Based High- κ Gate Dielectrics

Journal of the Electrochemical Society

Volumn 154, Issue 2, 2007, Pages

  Chowdhury, N A ^a   Misra, D ^a  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; ENERGY STORAGE; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS;

CHARGE TRAPPING; GATE DIELECTRICS; SHALLOW TRAPS; TRANSIENT BEHAVIORS;

DIELECTRIC MATERIALS;

EID: 33846230613     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2402989     Document Type: Article

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