Li-Ion Synaptic Transistor for Low Power Analog Computing

Advanced Materials

Volumn 29, Issue 4, 2017, Pages

  Fuller, Elliot J ^a   Gabaly, Farid El ^a   Léonard, François ^a   Agarwal, Sapan ^b   Plimpton, Steven J ^b   Jacobs Gedrim, Robin B ^b   James, Conrad D ^b   Marinella, Matthew J ^b   Talin, A Alec ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

data storage; nanodevices; transistors

Indexed keywords

ANALOG COMPUTERS; DIGITAL STORAGE; IONS;

ALL-SOLID-STATE; ANALOG COMPUTATION; ANALOG COMPUTING; DATA STORAGE; ENERGY PROCESS; NANO-DEVICES; RESISTANCE SWITCHING; RESISTANCE SWITCHING MECHANISMS;

TRANSISTORS;

EID: 85007480302     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201604310     Document Type: Article

References (59)

1. J. von Neumann, The Computer and the Brain, Yale Univ. Press, New Haven, CT, USA 1958.
2. P. S. S. Churchland, T. J. Sejnowski, The Computational Brain, MIT Press, Cambridge, MA, USA 1992.
3. P. A. Merolla, J. V. Arthur, R. Alvarez-Icaza, A. S. Cassidy, J. Sawada, F. Akopyan, B. L. Jackson, N. Imam, C. Guo, Y. Nakamura, Science 2014, 345, 668.
4. J. Partzsch, R. Schüffny, IEEE Trans. Neural Networks 2011, 22, 919.
5. S. Agarwal, T.-T. Quach, O. Parekh, A. H. Hsia, E. P. DeBenedictis, C. D. James, M. J. Marinella, J. B. Aimone, Front. Neurosci. 2015, 9, 484.
6. T. M. Taha, R. Hasan, C. Yakopcic, M. R. McLean, The 2013 International Joint Conference on Neural Networks (IJCNN) 2013, 1, Dallas, TX, USA.
7. R. Hasan, T. M. Taha, C. Yakopcic, D. J. Mountain, arxiv:org/abs/1606.04609, 2016.
8. J. Hasler, H. B. Marr, Front. Neurosci. 2013, 7, 118.
9. J. Ouyang, C.-W. Chu, C. R. Szmanda, L. Ma, Y. Yang, Nat. Mater. 2004, 3, 918.
10. D. B. Strukov, G. S. Snider, D. R. Stewart, R. S. Williams, Nature 2008, 453, 80.
11. H. S. P. Wong, S. Raoux, S. Kim, J. Liang, J. P. Reifenberg, B. Rajendran, M. Asheghi, K. E. Goodson, Proc. IEEE 2010, 98, 2201.
12. G. W. Burr, R. M. Shelby, S. Sidler, C. Di Nolfo, J. Jang, I. Boybat, R. S. Shenoy, P. Narayanan, K. Virwani, E. U. Giacometti, B. N. Kurdi, H. Hwang, IEEE Trans. Electron Devices 2015, 62, 3498.
13. J. J. Yang, I. H. Inoue, T. Mikolajick, C. S. Hwang, MRS Bull. 2012, 37, 131.
14. M. Prezioso, F. Merrikh-Bayat, B. Hoskins, G. Adam, K. K. Likharev, D. B. Strukov, Nature 2015, 521, 61.
15. X. Guo, F. Merrikh-Bayat, L. Gao, B. D. Hoskins, F. Alibart, B. Linares-Barranco, L. Theogarajan, C. Teuscher, D. B. Strukov, Front. Neurosci. 2015, 9, 488.
16. J. J. Yang, D. B. Strukov, D. R. Stewart, Nat. Nanotechnol. 2013, 8, 13.
17. M. Terai, Y. Sakotsubo, S. Kotsuji, H. Hada, IEEE Electron Device Lett. 2010, 31, 204.
18. G. F. Close, U. Frey, M. Breitwisch, H. L. Lung, C. Lam, C. Hagleitner, E. Eleftheriou, IEEE Int. Electron Devices Meet. 2010, 29.5.1, San Francisco, CA, USA.
19. D. B. Strukov, R. S. Williams, Appl. Phys. A 2009, 94, 515.
20. S. Menzel, M. Waters, A. Marchewka, U. Böttger, R. Dittmann, R. Waser, Adv. Funct. Mater. 2011, 21, 4487.
21. A. Athmanathan, M. Stanisavljevic, N. Papandreou, H. Pozidis, E. Eleftheriou, IEEE J. Emerging and Sel. Top. Circuits Syst. 2016, 6, 87.
22. P.-Y. Chen, B. Lin, I. Wang, T.-H. Hou, J. Ye, S. Vrudhula, J.-s. Seo, Y. Cao, S. Yu, IEEE/ACM Int. Conf. Comput.-Aided Des. 2015, 194, Austin, TX, USA.
23. M. J. Kim, I. G. Baek, Y. H. Ha, S. J. Baik, J. H. Kim, D. J. Seong, S. J. Kim, Y. H. Kwon, C. R. Lim, H. K. Park, D. Gilmer, P. Kirsch, R. Jammy, Y. G. Shin, S. Choi, C. Chung, IEEE Int. Electron Devices Meet. 2010, 19.3.1, San Francisco, CA, USA.
24. P.-Y. Chen, D. Kadetotad, Z. Xu, A. Mohanty, B. Lin, J. Ye, S. Vrudhula, J.-s. Seo, Y. Cao, S. Yu, Proc. 2015 Des. Autom. Test Eur. Conf. Exhib. 2015, 854, Grenoble, France.
25. P. Gkoupidenis, N. Schaefer, B. Garlan, G. G. Malliaras, Adv. Mater. 2015, 27, 7176.
26. S. Thakoor, A. Moopenn, T. Daud, A. Thakoor, J. Appl. Phys. 1990, 67, 3132.
27. B. Widrow, M.E. Hoff, IRE WESCON convention record 1960, 4, 1, 96
28. T. Hasegawa, Y. Itoh, H. Tanaka, T. Hino, T. Tsuruoka, K. Terabe, H. Miyazaki, K. Tsukagoshi, T. Ogawa, S. Yamaguchi, A. Masakazu, Appl. Phys. Express 2010, 4, 015204.
29. V. G. Karpov, Y. A. Kryukov, M. Mitra, I. V. Karpov, J. Appl. Phys. 2008, 104, 054507.
30. S. Ryu, S. Yoon, K. Choi, N. Lee, Y. Park, S. Lee, B. Yu, J. Park, W. Shin, J. Electrochem. Soc. 2006, 153, G234.
31. A. Milewska, K. Swierczek, J. Tobola, F. Boudoire, Y. Hu, D. K. Bora, B. S. Mun, A. Braun, J. Molenda, Solid State Ionics 2014, 263, 110.
32. R. A. Huggins, Springer, Advanced Batteries: Materials Science Aspects, New York 2009
33. D. Danilov, R. A. H. Niessen, P. H. L. Notten, J. Electrochem. Soc. 2011, 158, A215.
34. V. H. Mai, A. Moradpour, P. A. Senzier, C. Pasquier, K. Wang, M. J. Rozenberg, J. Giapintzakis, C. N. Mihailescu, C. M. Orfanidou, E. Svoukis, A. Breza, C. B. Lioutas, S. Franger, A. Revcolevschi, T. Maroutian, P. Lecoeur, P. Aubert, G. Agnus, R. Salot, P. A. Albouy, R. Weil, D. Alamarguy, K. March, F. Jomard, P. Chretien, O. Schneegans, Sci. Rep. 2015, 5, 7761.
35. J. D. Greenlee, C. F. Petersburg, W. G. Daly, F. M. Alamgir, W. A. Doolittle, Appl. Phys. Lett. 2013, 102, 213502.
36. J. Jeong, N. Aetukuri, T. Graf, T. D. Schladt, M. G. Samant, S. S. Parkin, Science 2013, 339, 1402.
37. J. Shi, S. D. Ha, Y. Zhou, F. Schoofs, S. Ramanathan, Nat. Commun. 2013, 4, 2676.
38. B. Put, P. M. Vereecken, J. Meersschaut, A. Sepúlveda, A. Stesmans, ACS Appl. Mater. Interfaces 2016, 8, 7060.
39. C. Gong, D. Ruzmetov, A. Pearse, D. Ma, J. N. Munday, G. Rubloff, A. A. Talin, M. S. Leite, ACS Appl. Mater. Interfaces 2015, 7, 26007.
40. P. A. Cox, The Electronic Structure and Chemistry of Solids, Oxford University Press, New York 1987.
41. D. Young, A. Ransil, R. Amin, Z. Li, Y.-M. Chiang, Adv. Energy Mater. 2013, 3, 1125.
42. N. J. Dudney, Mater. Sci. Eng. B 2005, 116, 245.
43. C. A. Marianetti, G. Kotliar, G. Ceder, Nat. Mater. 2004, 3, 627.
44. V. A. Sethuraman, V. Srinivasan, J. Newman, J. Electrochem. Soc. 2013, 160, A394.
45. R. Baddour-Hadjean, J. P. Pereira-Ramos, Chem. Rev. 2010, 110, 1278.
46. F. L. Cras, B. Pecquenard, V. Dubois, V.-P. Phan, D. Guy-Bouyssou, Adv. Energy Mater. 2015, 5, 1501061.
47. Cymbet, http://www.cymbet.com/pdfs/DS-72-41.pdf (accessed: August 2016).
48. Cytech, http://www.cytech.com/products-ips (accessed: August 2016).
49. G. W. Burr, R. S. Shenoy, K. Virwani, P. Narayanan, A. Padilla, B. Kurdi, H. Hwang, J. Vac. Sci. Technol. B 2014, 32, 040802.
50. P. Narayanan, G. W. Burr, R. S. Shenoy, S. Stephens, K. Virwani, A. Padilla, B. N. Kurdi, K. Gopalakrishnan, IEEE J. Electron Devices Soc. 2015, 3, 423.
51. K. Bache, M. Lichman, 2016, University of California at Irvine, School of Information and Computer Science, Irvine, CA, USA.
52. Y. LeCun, C. Cortes, C. J. Burges, 2016, National Institute of Standards and Technology, Gaithersburg, MD, USA.
53. A. Cox Jonathan, C. D. James, J. B. Aimone, Proc. Comput. Sci. 2015, 61, 349.
54. A. J. Lohn, J. E. Stevens, P. R. Mickel, D. R. Hughart, M. J. Marinella, ECS Trans. 2013, 58, 59.
55. E. Vianello, D. Garbin, N. Jovanovic, O. Bichler, O. Thomas, B. de Salvo, L. Perniola, ECS Trans. 2015, 69, 3.
56. C.-L. Tsai, F. Xiong, E. Pop, M. Shim, ACS Nano 2013, 7, 5360.
57. J. P. Strachan, A. C. Torrezan, G. Medeiros-Ribeiro, R. S. Williams, Nanotechnology 2011, 22, 505402.
58. M. Park, X. Zhang, M. Chung, G. B. Less, A. M. Sastry, J. Power Sources 2010, 195, 7904.
59. M. Haruta, S. Shiraki, T. Suzuki, A. Kumatani, T. Ohsawa, Y. Takagi, R. Shimizu, T. Hitosugi, Nano Lett. 2015, 15, 1498.