A correlated nickelate synaptic transistor

Nature Communications

Volumn 4, Issue , 2013, Pages

  Shi, Jian ^a   Ha, Sieu D ^a   Zhou, You ^a   Schoofs, Frank ^a   Ramanathan, Shriram ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IONIC LIQUID; METAL DERIVATIVE; METAL OXIDE; NICKELATE; SILICON; UNCLASSIFIED DRUG;

COGNITION; CORRELATION; ELECTRICAL PROPERTY; INTEGRATED APPROACH; NEUROLOGY; OXIDE; PARADIGM SHIFT; TEMPERATURE EFFECT;

ARTICLE; CONDUCTANCE; FILM; LEARNING; NERVE CELL; NERVE CELL PLASTICITY; ROOM TEMPERATURE; SEMICONDUCTOR; SIGNAL TRANSDUCTION; STOICHIOMETRY; SYNAPSE; TRANSITION TEMPERATURE;

ANIMALS; ARTIFICIAL INTELLIGENCE; CALCIUM COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRONS; HUMANS; IONIC LIQUIDS; MODELS, NEUROLOGICAL; NEURONS; NICKEL; OXIDES; SILICON; SYNAPSES; TITANIUM; TRANSISTORS, ELECTRONIC;

EID: 84887288780     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms3676     Document Type: Article

References (59)

1. Boahen, K. A. Neuromorphic microchips. Sci. Am. 292, 56-63 (2005).
2. Ha, S. D. & Ramanathan, S. Adaptive oxide electronics: a review. J. Appl. Phys. 110, 071101 (2011).
3. Hopfield, J. J. Brain, neural networks, and computation. Rev. Mod. Phys. 71, S431-S437 (1999).
4. Chua, L. O. & Yang, L. Cellular neural networks - applications. IEEE T Circuits Syst 35, 1273-1290 (1988).
5. Aihara, K., Takabe, T. & Toyoda, M. Chaotic neural networks. Phys. Lett. A 144, 333-340 (1990).
6. Snider, G. S. Self-organized computation with unreliable, memristive nanodevices. Nanotechnology 18, 365202 (2007).
7. Alibart, F. et al. An organic nanoparticle transistor behaving as a biological spiking synapse. Adv. Funct. Mater. 20, 330-337 (2010).
8. Jo, S. H. et al. Nanoscale memristor device as synapse in neuromorphic systems. Nano. Lett. 10, 1297-1301 (2010).
9. Kuzum, D., Jeyasingh, R. G. D., Lee, B. & Wong, H. S. P. Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing. Nano Lett. 12, 2179-2186 (2012).
10. Mahowald, M. & Douglas, R. A silicon neuron. Nature 354, 515-518 (1991). (Pubitemid 21896829)
11. Pershin, Y. V., La Fontaine, S. & Di Ventra, M. Memristive model of amoeba learning. Phys. Rev. E 80, 021926 (2009).
12. Snider, G. S. Spike-timing-dependent learning in memristive nanodevices. PR. INT. SYMP. NANOARCH 2008, 85-92 (2008).
13. Sejnowski, T. & Delbruck, T. The language of the brain. Sci. Am. 307, 54-59 (2012).
14. Raoux, S., Welnic, W. & Ielmini, D. Phase change materials and their application to nonvolatile memories. Chem. Rev. 110, 240-267 (2010).
15. Waser, R. Resistive non-volatile memory devices. Microelectron. Eng. 86, 1925-1928 (2009).
16. Ohno, T. et al. Short-term plasticity and long-term potentiation mimicked in single inorganic synapses. Nat. Mater. 10, 591-595 (2011).
17. Chang, T., Jo, S. H. & Lu, W. Short-term memory to long-term memory transition in a nanoscale memristor. ACS Nano 5, 7669-7676 (2011).
18. Shima, H. et al. Resistance switching in the metal deficient-type oxides: NiO and CoO. Appl. Phys. Lett. 91, 012901 (2007). (Pubitemid 350092111)
19. Zhong, N., Shima, H. & Akinaga, H. Switchable Pt/TiO2-x/Pt schottky diodes. Jpn. J. Appl. Phys. 48, 05DF03 (2009).
20. Hebb, D. O., Martinez, J. L. & Glickman, S. E. The organization of behavior - a neuropsychological theory. Contemp. Psychol. 39, 1018-1020 (1994).
21. Abbott, L. F. & Nelson, S. B. Synaptic plasticity: taming the beast. Nat. Neurosci. 3, 1178-1183 (2000).
22. Dan, Y. & Poo, M. M. Spike timing-dependent plasticity of neural circuits. Neuron 44, 23-30 (2004). (Pubitemid 39348828)
23. Diorio, C., Hasler, P., Minch, A. & Mead, C. A. A single-transistor silicon synapse. IEEE T. Electron. Dev. 43, 1972-1980 (1996).
24. Ishiwara, H. Proposal of adaptive-learning neuron circuits with ferroelectric analog-memory weights. Jpn. J. Appl. Phys. 32, 442-446 (1993). (Pubitemid 23622820)
25. Ishiwara, H., Aoyama, Y., Okada, S., Shimamura, C. & Tokumitsu, E. Ferroelectric neuron circuits with adaptive-learning function. Comput. Electr. Eng. 23, 431-438 (1997). (Pubitemid 127435114)
26. Nishitani, Y., Kaneko, Y., Ueda, M., Morie, T. & Fujii, E. Three-terminal ferroelectric synapse device with concurrent learning function for artificial neural networks. J. Appl. Phys. 111, 124108 (2012).
27. Thakoor, S., Moopenn, A., Daud, T. & Thakoor, A. P. Solid-state thin-film memistor for electronic neural networks. J. Appl. Phys. 67, 3132-3135 (1990).
28. Lai, Q. X. et al. Ionic/electronic hybrid materials integrated in a synaptic transistor with signal processing and learning functions. Adv. Mater. 22, 2448-2453 (2010).
29. Catalan, G. Progress in perovskite nickelate research. Phase Transit. 81, 729-749 (2008).
30. Boris, A. V. et al. Dimensionality control of electronic phase transitions in nickel-oxide superlattices. Science 332, 937-940 (2011).
31. Nikulin, I. V., Novojilov, M. A., Kaul, A. R., Mudretsova, S. N. & Kondrashov, S. V. Oxygen nonstoichiometry of NdNiO3-delta and SmNiO3-delta. Mater. Res. Bull. 39, 775-791 (2004).
32. Mahesh, R., Kannan, K. R. & Rao, C. N. R. Electrochemical synthesis of ferromagnetic Lamno3 and metallic Ndnio3. J. Solid State Chem. 114, 294-296 (1995).
33. Tiwari, A. & Rajeev, K. P. Effect of oxygen stoichiometry on the electrical resistivity behaviour of NdNiO3-delta. Solid State Commun. 109, 119-124 (1999).
34. Conchon, F. et al. The role of strain-induced structural changes in the metal-insulator transition in epitaxial SmNiO3 films. J. Phys. Condens. Mat. 20, 145216(1)-145216(7) (2008).
35. Conchon, F. et al. Effect of tensile and compressive strains on the transport properties of SmNiO3 layers epitaxially grown on (001) SrTiO3 and LaAlO3 substrates. Appl. Phys. Lett. 91, 192110 (2007).
36. Tiwari, A., Jin, C. & Narayan, J. Strain-induced tuning of metal-insulator transition in NdNiO3. Appl. Phys. Lett. 80, 4039-4041 (2002).
37. Asanuma, S. et al. Tuning of the metal-insulator transition in electrolyte-gated NdNiO3 thin films. Appl. Phys. Lett. 97, 142110 (2010).
38. Ha, S. D., Vetter, U., Shi, J. & Ramanathan, S. Electrostatic gating of metallic and insulating phases in SmNiO3 ultrathin films. Appl. Phys. Lett. 102, 183102 (2013).
39. Scherwitzl, R. et al. Electric-field control of the metal-insulator transition in ultrathin NdNiO3 films. Adv. Mater. 22, 5517-5520 (2010).
40. Scherwitzl, R., Zubko, P., Lichtensteiger, C. & Triscone, J. M. Electric-field tuning of the metal-insulator transition in ultrathin films of LaNiO3. Appl. Phys. Lett. 95, 222114 (2009).
41. Liao, Z., Gao, P., Bai, X., Chen, D. & Zhang, J. Evidence for electric-field-driven migration and diffusion of oxygen vacancies in Pr0.7Ca0.3MnO3. J. Appl. Phys. 111, 114506 (2012).
42. Li, K. T. & Lo, V. C. Simulation of oxygen vacancy induced phenomena in ferroelectric thin films. J. Appl. Phys. 97, 034107 (2005).
43. Nian, Y. B., Strozier, J., Wu, N. J., Chen, X. & Ignatiev, A. Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides. Phys. Rev. Lett. 98, 146403(1)-146403(4) (2007).
44. Sawa, A. Resistive switching in transition metal oxides. Mater. Today 11, 28-36 (2008). (Pubitemid 351680723)
45. Jeong, J. et al. Suppression of metal-insulator transition in VO2 by electric fieldinduced oxygen vacancy formation. Science 339, 1402-1405 (2013).
46. AlNashef, I. M., Leonard, M. L., Kittle, M. C., Matthews, M. A. & Weidner, J. W. Electrochemical generation of superoxide in room-temperature ionic liquids. Electrochem. Solid-State Lett. 4, D16-D18 (2001).
47. Buzzeo, M. C. et al. Voltammetry of oxygen in the room-temperature ionic liquids 1-ethyl-3-methylimidazolium bis((trifluoromethyl)sulfonyl) imide and hexyltriethylammonium bis((trifluoromethyl)sulfonyl)imide: one-electron reduction to form superoxide. steady-state and transient behavior in the same cyclic voltammogram resulting from widely different diffusion coefficients of oxygen and superoxide. J. Phys. Chem. A 107, 8872-8878 (2003).
48. Katayama, Y., Onodera, H., Yamagata, M. & Miura, T. Electrochemical reduction of oxygen in some hydrophobic room-temperature molten salt systems. J. Electrochem. Soc. 151, A59-A63 (2004).
49. Hapiot, P. & Lagrost, C. Electrochemical reactivity in room-temperature ionic liquids. Chem. Rev. 108, 2238-2264 (2008).
50. Medarde, M. L. Structural, magnetic and electronic properties of RNiO3 perovskites (R equals rare earth). J. Phys. Condens. Mat. 9, 1679-1707 (1997). (Pubitemid 127612088)
51. Jaramillo, R., Schoofs, F., Ha, S. D. & Ramanathan, S. High pressure synthesis of SmNiO3 thin films and implications for thermodynamics of the nickelates. J. Mater. Chem. C 1, 2455-2462 (2013).
52. Kharton, V. V., Marques, F. M. B. & Atkinson, A. Transport properties of solid oxide electrolyte ceramics: a brief review. Solid State Ionics 174, 135-149 (2004).
53. Abazari, M., Tsuchiya, M. & Ramanathan, S. High-temperature electrical conductivity measurements on nanostructured yttria-doped ceria thin films in ozone. J. Am. Ceram. Soc. 95, 312-317 (2012).
54. Switzer, E. E. et al. Oxygen reduction reaction in ionic liquids: the addition of protic species. J. Phys. Chem. C 117, 8683-8690 (2013).
55. Walsh, D. A., Ejigu, A., Smith, J. & Licence, P. Kinetics and mechanism of oxygen reduction in a protic ionic liquid. Phys. Chem. Chem. Phys. 15, 7548-7554 (2013).
56. Amboage, M., Hanfland, M., Alonso, J. A. & Martinez-Lope, M. J. High pressure structural study of SmNiO3. J. Phys. Condens. Mat. 17, S783-S788 (2005). (Pubitemid 40416525)
57. Torriss, B., Chaker, M. & Margot, J. Electrical and Fourier transform infrared properties of epitaxial SmNiO3 tensile strained thin film. Appl. Phys. Lett. 101, 091908 (2012).
58. Ramanathan, S. Interface-mediated ultrafast carrier conduction in oxide thin films and superlattices for energy. J. Vac. Sci. Technol. A 27, 1126-1134 (2009).
59. Zhou, Y. & Ramanathan, S. Relaxation dynamics of ionic liquid-VO2 interfaces and influence in electric double-layer transistors. J. Appl. Phys. 111, 084508 (2012).