Multilevel-Cell Phase-Change Memory: A Viable Technology

IEEE Journal on Emerging and Selected Topics in Circuits and Systems

Volumn 6, Issue 1, 2016, Pages 87-100

  Athmanathan, Aravinthan ^a   Stanisavljevic, Milos ^b   Papandreou, Nikolaos ^b   Pozidis, Haralampos ^b   Eleftheriou, Evangelos ^b  

^a EPFL   (Switzerland)

^b IBM RESEARCH ZURICH   (Switzerland)

Author keywords

Memory; nonvolatile memory; phase change memory; Semiconductor device reliability

Indexed keywords

CELLS; CYTOLOGY; DATA STORAGE EQUIPMENT; DIGITAL STORAGE; DYNAMIC RANDOM ACCESS STORAGE; FLASH MEMORY; NONVOLATILE STORAGE; SEMICONDUCTOR DEVICES;

ELEVATED TEMPERATURE; INCUMBENT TECHNOLOGY; INTENSIVE RESEARCH; MULTI LEVEL CELL (MLC); NON-VOLATILE MEMORY; OPERATING CONDITION; PHASE CHANGE MEMORY (PCM); SEMICONDUCTOR DEVICE RELIABILITY;

PHASE CHANGE MEMORY;

EID: 84963945096     PISSN: 21563357     EISSN: None     Source Type: Journal    
DOI: 10.1109/JETCAS.2016.2528598     Document Type: Article

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