A CMOS compatible, forming free TaOx ReRAM

ECS Transactions

Volumn 58, Issue 5, 2013, Pages 59-65

  Lohn, A J ^a   Stevens, J E ^a   Mickel, P R ^a   Hughart, D R ^a   Marinella, M J ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; RRAM; TANTALUM OXIDES;

CMOS COMPATIBLE; NON-VOLATILE MEMORY; RESISTANCE STATE; RESISTIVE RANDOM ACCESS MEMORY (RERAM); RESISTIVE SWITCHING; VACANCY CONCENTRATION; WAFER SCALE PROCESS;

RHENIUM COMPOUNDS;

EID: 84900388661     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/05805.0059ecst     Document Type: Conference Paper

References (11)

1. B. Govoreanu et al, IEDM Tech Dig, 31.6.1 (2011).
2. K.-T.T. Cheng, D.B. Strukov, Proc. ISPD, 33 (2012).
3. C.T. Antonio, et al. Nanotechnology 22, 485203 (2011).
4. M.-J. Lee et al. Nat. Mater. 10 625 (2011).
5. Y.V. Pershin, M. Di Ventra, Proc of the IEEE, 100, 2071 (2012).
6. R. Waser et al. Adv. Mater. 21 2632 (2009).
7. P.R. Mickel, et al, Appl Phys Lett, 102, 223502 (2013).
8. Y.Y. Chen, et al, Mcroelectron Eng, In Press (2013).
9. C.-H. Wang, et al, Proc of the IEDM 29.6.1 (2010).
10. J.J. Yang, et al, Appl Phys Lett, 97, 232102 (2010).
11. A.J. Lohn, et al, Appl Phys Lett, In Press (2013).