Edge effects on band gap energy in bilayer 2 H -MoS2 under uniaxial strain

Journal of Applied Physics

Volumn 117, Issue 24, 2015, Pages

  Dong, Liang ^a   Wang, Jin ^a   Namburu, Raju ^b   O'Regan, Terrance P ^b   Dubey, Madan ^b   Dongare, Avinash M ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUUM MECHANICS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; MOLYBDENUM COMPOUNDS; OPTOELECTRONIC DEVICES; STRAIN; VAN DER WAALS FORCES;

BAND GAP ENERGY; BI-LAYER STRUCTURE; ELECTRONIC BAND GAPS; EXPERIMENTAL METHODS; MECHANICAL DEFORMATION; THEORETICAL STUDY; UNI-AXIAL STRAINS; VAN DER WAALS INTERACTIONS;

ENERGY GAP;

EID: 84933526986     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4922811     Document Type: Article

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