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Volumn 3, Issue 38, 2013, Pages 17287-17293

Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT BAND GAP; GROWTH MECHANISMS; LAYERED STRUCTURES; NANOELECTRONIC DEVICES; OPTICAL ANALYSIS; SYNTHETIC APPROACH; TETRAHEDRAL CLUSTERS; VAN DER WAALS;

EID: 84883870080     PISSN: None     EISSN: 20462069     Source Type: Journal    
DOI: 10.1039/c3ra42171f     Document Type: Article
Times cited : (41)

References (39)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.