The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC

Applied Physics Letters

Volumn 100, Issue 24, 2012, Pages

  Eriksson, Jens ^a   Pearce, Ruth ^a   Iakimov, Tihomir ^a   Virojanadara, Chariya ^a   Gogova, Daniela ^b   Andersson, Mike ^a   Syväjärvi, Mikael ^a   Lloyd Spetz, Anita ^a   Yakimova, Rositza ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DEVICE; EPITAXIAL GRAPHENE; IDENTICAL CONDITIONS; INHOMOGENEITIES; NUMBER OF LAYERS; SIC SUBSTRATES; THICKNESS UNIFORMITY; UNINTENTIONAL DOPING; WORK FUNCTION MEASUREMENTS;

EPITAXIAL GROWTH; GRAPHENE; SILICON CARBIDE;

SUBSTRATES;

EID: 84863320714     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4729556     Document Type: Article

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