Precise control of epitaxy of graphene by microfabricating SiC substrate

Applied Physics Letters

Volumn 101, Issue 4, 2012, Pages

  Fukidome, H ^a   Kawai, Y ^a   Fromm, F ^b   Kotsugi, M ^c   Handa, H ^a   Ide, T ^a   Ohkouchi, T ^c   Miyashita, H ^a   Enta, Y ^d   Kinoshita, T ^c   Seyller, Th ^b   Suemitsu, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^d HIROSAKI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE CHARACTERISTICS; EPITAXIAL GRAPHENE; GRAPHENE DEVICES; HIGH-QUALITY FILMS; LAYER THICKNESS; MICROFABRICATED; NEAR-SURFACE; PRECISE CONTROL; SIC SUBSTRATES; THICKNESS VARIATION; WAFER SCALE;

ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; SILICON CARBIDE; SUBSTRATES;

GRAPHENE;

EID: 84864480663     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4740271     Document Type: Article

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