The effect of a SiC cap on the growth of epitaxial graphene on SiC in ultra high vacuum

Carbon

Volumn 50, Issue 8, 2012, Pages 3026-3031

  Çelebi, Cem ^a   Yanik, Cenk ^a   Demirkol, Anil Günay ^a   Kaya, Ismet I ^a  

^a SABANCI UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPED SAMPLES; CARBON RICH; EPITAXIAL GRAPHENE; GRAPHENE GROWTH; HIGH GROWTH RATE; HIGH PARTIAL PRESSURE; HIGH-TEMPERATURE ANNEALING; SAMPLE SURFACE; SHALLOW CAVITIES; SIC SUBSTRATES; SILICON ATOMS; STRUCTURE AND MORPHOLOGY; THICKNESS UNIFORMITY; VAPOR PHASE;

EPITAXIAL GROWTH; RAMAN SPECTROSCOPY; SILICON CARBIDE; SUBSTRATES;

GRAPHENE;

EID: 84859580497     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2012.02.088     Document Type: Article

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