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Volumn 106, Issue 18, 2015, Pages

Graphite edge controlled registration of monolayer MoS2 crystal orientation

(13) Lu, Chun I a Butler, Christopher John a Huang, Jing Kai b Hsing, Cheng Rong b Yang, Hung Hsiang a Chu, Yu Hsun a Luo, Chi Hung a Sun, Yung Che a Hsu, Shih Hao a Yang, Kui Hong Ou a Wei, Ching Ming b Li, Lain Jong b Lin, Minn Tsong a,b

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; GRAPHITE; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SURFACE MORPHOLOGY; TRANSITION METALS;

ATOMIC FORCE AND SCANNING TUNNELING MICROSCOPY; EDGE STRUCTURES; GRAPHITE SUBSTRATE; LATTICE VECTORS; ROTATIONAL ANGLE; STEP EDGE; TRANSITION METAL DICHALCOGENIDES; TWO-DIMENSIONAL CRYSTALS;

SULFUR COMPOUNDS;

EID: 84929223403 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4919923 Document Type: Article

Times cited : (44)

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