Effect of impurities on the raman scattering of 6H-SiC crystals

Materials Research

Volumn 15, Issue 6, 2012, Pages 833-836

  Lin, Shenghuang ^a   Chen, Zhiming ^a   Li, Lianbi ^b   Yang, Chen ^a  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

^b XI'AN POLYTECHNIC UNIVERSITY   (China)

Author keywords

6H SiC; Impurity; Raman scattering

Indexed keywords

6H-SIC; DEEP ENERGY LEVELS; FIRST-ORDER; FREE CARRIER CONCENTRATION; HIGHER FREQUENCIES; LOWER FREQUENCIES; POLYTYPES; SECOND ORDERS;

IMPURITIES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON CARBIDE;

CRYSTAL IMPURITIES;

EID: 84870438604     PISSN: 15161439     EISSN: None     Source Type: Journal    
DOI: 10.1590/S1516-14392012005000108     Document Type: Article

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