Bandgap tunability at single-layer molybdenum disulphide grain boundaries

Nature Communications

Volumn 6, Issue , 2015, Pages

  Huang, Yu Li ^a,b   Chen, Yifeng ^a,b   Zhang, Wenjing ^a,c,d   Quek, Su Ying ^a,b   Chen, Chang Hsiao ^e   Li, Lain Jong ^e,f   Hsu, Wei Ting ^g   Chang, Wen Hao ^g   Zheng, Yu Jie ^a   Chen, Wei ^a,b   Wee, Andrew T S ^a,b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b National University of Singapore   (Singapore)

^c Shenzhen University   (China)

^d SHENZHEN UNIVERSITY   (China)

^e INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^f KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^g NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE; DISULFIDE; GRAPHENE; GRAPHITE; MOLYBDENUM; MOLYBDENUM DISULPHIDE; UNCLASSIFIED DRUG;

ELECTRONIC EQUIPMENT; OPTICAL PROPERTY; SUBSTRATE; SULFIDE; TECHNOLOGICAL CHANGE; TWO-DIMENSIONAL MODELING;

ARTICLE; BANDGAP TUNABILITY; CHEMICAL PROCEDURES; CHEMICAL STRUCTURE; CHEMICAL VAPOR DEPOSITION METHOD; DENSITY FUNCTIONAL THEORY; ELECTRICAL PARAMETERS; GRAIN BOUNDARY; IONIZATION; LOW TEMPERATURE; MOLECULAR ELECTRONICS; PERIODICITY; PHYSICAL PHENOMENA; ROOM TEMPERATURE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; SPECTROSCOPY; THICKNESS;

EID: 84923366339     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms7298     Document Type: Article

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