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Volumn 28, Issue 24, 2016, Pages 4824-4831

A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique

(13) Jo, Seo Hyeon a Kang, Dong Ho a Shim, Jaewoo a Jeon, Jaeho b Jeon, Min Hwan b Yoo, Gwangwe a Kim, Jinok a Lee, Jaehyeong a Yeom, Geun Young b Lee, Sungjoo b Yu, Hyun Yong c Choi, Changhwan d Park, Jin Hong a

a Sungkyunkwan University (South Korea)

b Sungkyunkwan University (South Korea)

c Korea University (South Korea)

d Hanyang University (South Korea)

Author keywords

nondegenerate doping; photodetectors; PPh3; type converted FET; WSe2

Indexed keywords

BORON NITRIDE; ECONOMIC AND SOCIAL EFFECTS; III-V SEMICONDUCTORS; PHOTODETECTORS; PHOTONS; TRANSITION METALS;

DOPING CONCENTRATION; HEXAGONAL BORON NITRIDE (H-BN); NONDEGENERATE; PPH3; TRANSITION METAL DICHALCOGENIDES; TRIPHENYL PHOSPHINES; TYPE-CONVERTED FET; WSE2;

SELENIUM COMPOUNDS;

EID: 84975074988 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201600032 Document Type: Article

Times cited : (151)

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