Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2

Optics Express

Volumn 21, Issue 4, 2013, Pages 4908-4916

  Tonndorf, Philipp ^a   Schmidt, Robert ^a   Böttger, Philipp ^a   Zhang, Xiao ^a   Börner, Janna ^a   Liebig, Andreas ^a   Albrecht, Manfred ^a   Kloc, Christian ^b   Gordan, Ovidiu ^a   Zahn, Dietrich R T ^a   De Vasconcellos, Steffen Michaelis ^a   Bratschitsch, Rudolf ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ENERGY GAP; MOLYBDENUM; MOLYBDENUM COMPOUNDS; MONOLAYERS; RAMAN SPECTROSCOPY; SELENIUM COMPOUNDS; TRANSITION METALS; TUNGSTEN;

BULK MATERIALS; DIRECT BAND GAP SEMICONDUCTORS; HIGH RESOLUTION; INDIRECT BAND GAP; MOLYBDENUM DISELENIDE; MOLYBDENUM DISULFIDE; NUMBER OF LAYERS; PHOTOLUMINESCENCE EMISSION; RAMAN RESPONSE; TRANSITION METAL DICHALCOGENIDES; TUNGSTEN DISELENIDE;

PHOTOLUMINESCENCE;

TRANSITION ELEMENT;

CHEMISTRY; LIGHT; LUMINESCENCE; MATERIALS TESTING; PROCEDURES; RADIATION RESPONSE; RADIATION SCATTERING; RAMAN SPECTROMETRY; ARTICLE; METHODOLOGY; RADIATION EXPOSURE;

LIGHT; LUMINESCENT MEASUREMENTS; MATERIALS TESTING; SCATTERING, RADIATION; SPECTRUM ANALYSIS, RAMAN; TRANSITION ELEMENTS;

EID: 84874521110     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.21.004908     Document Type: Article

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