Hole mobility enhancement and p-doping in monolayer WSe2 by gold decoration

2D Materials

Volumn 1, Issue 3, 2014, Pages

  Chen, Chang Hsiao ^a,b   Wu, Chun Lan ^a   Pu, Jiang ^c   Chiu, Ming Hui ^d   Kumar, Pushpendra ^a   Takenobu, Taishi ^c   Li, Lain Jong ^d  

^a INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c WASEDA UNIVERSITY   (Japan)

^d KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

doping; transition metal dichalcogenide; WSe2

Indexed keywords

DIGITAL DEVICES; DOPING (ADDITIVES); FERMI LEVEL; FIELD EFFECT TRANSISTORS; GOLD; GOLD DEPOSITS; HOLE MOBILITY; MONOLAYERS; SELENIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; TRANSITION METALS;

CHANNEL RESISTANCE; DIGITAL LOGIC APPLICATIONS; MOBILITY ENHANCEMENT; ON/OFF CURRENT RATIO; ORDERS OF MAGNITUDE; TRANSITION METAL DICHALCOGENIDES; TUNGSTEN DISELENIDE; WSE2;

TUNGSTEN COMPOUNDS;

EID: 84923457417     PISSN: None     EISSN: 20531583     Source Type: Journal    
DOI: 10.1088/2053-1583/1/3/034001     Document Type: Article

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