Exciton kinetics, quantum efficiency, and efficiency droop of monolayer MoS2 light-emitting devices

Nano Letters

Volumn 14, Issue 7, 2014, Pages 4125-4130

  Salehzadeh, O ^a   Tran, N H ^a   Liu, X ^a   Shih, I ^a   Mi, Z ^a  

^a MCGILL UNIVERSITY   (Canada)

Author keywords

Auger recombination; carrier lifetime; efficiency droop; photoluminescence; quantum efficiency

Indexed keywords

AUGERS; CARRIER LIFETIME; CURRENT DENSITY; EFFICIENCY; MOLYBDENUM COMPOUNDS; MONOLAYERS; PHOTOLUMINESCENCE; TWO DIMENSIONAL;

AUGER RECOMBINATION; EFFICIENCY DROOPS; ELECTRONS AND HOLES; INTERNAL QUANTUM EFFICIENCY; LIGHT EMITTING DEVICES; ORDERS OF MAGNITUDE; RATE-EQUATION ANALYSIS;

QUANTUM EFFICIENCY;

EID: 84904015772     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl5017283     Document Type: Article

References (37)

1. 2 Nano Lett. 2010, 10, 1271
2. Kuc, A.; Zibouche, N.; Heine, T. Influence of Quantum Confinement on the Electronic Structure of the Transition Metal Sulfide TS2 Phys. Rev. B 2011, 83, 245213
3. 2: A New Direct-Gap Semiconductor Phys. Rev. Lett. 2010, 105, 136805
4. Zhu, Z. Y.; Cheng, Y. C.; Schwingenschloegl, U. Giant Spin- Orbit-Induced Spin Splitting in Two-Dimensional Transition-Metal Dichalcogenide Semiconductors Phys. Rev. B 2011, 84, 153402
5. Ross, J. S.; Klement, P.; Jones, A. M.; Ghimire, N. J.; Yan, J.; Mandrus, D. G.; Taniguchi, T.; Watanabe, K.; Kitamura, K.; Yao, W. Electrically Tunable Excitonic Light-Emitting Diodes Based on Monolayer WSe2 p-n Junctions Nat. Nanotechnol. 2014, 10.1038/nnano.2014.26
6. Bernardi, M.; Palummo, M.; Grossman, J. C. Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaic Using Two-Dimensional Monolayer Materials Nano Lett. 2013, 13, 3664
7. 2 Nat. Nanotechnol. 2013, 8, 497-501
8. Hangleiter, A. Recombination of Correlated Electron-Hole Pairs in Two-Dimensional Semiconductors Phys. Rev. B 1993, 48, 9146
9. 2 (X = S, Se,Te) Physica B 2013, 419, 66
10. 2 J. Phys. Chem. C 2011, 115, 3934
11. 2 Phys. Rev. B 2012, 86, 241401 (R)
12. 2 Appl. Phys. Lett. 2011, 99, 102109
13. 2 2D Crystals ACS Nano 2013, 7, 1072
14. 2 and Other Group-VI Dichalcogenides Phys. Rev. Lett. 2012, 108, 196802
15. Varshni, Y. Temperature Dependence of the Energy Gap in Semiconductors Physica (Amsterdam) 1967, 34, 149
16. Zhao, H.; Wachter, S.; Kalt, H. Effect of Quantum Confinement on Exciton-Phonon Interactions Phys. Rev. B 2002, 66, 085337
17. Srinivas, V.; Hryniewicz, J.; Chen, Y.; Wood, C. Intrinsic Linewidths and Radiative Lifetimes of Free Excitons in GaAs Quantum Wells Phys. Rev. B 1992, 46, 10193-10196
18. 2 Phys. Rev. B 2011, 84, 155413
19. 2: Evolution of Raman Scattering Adv. Funct. Mater. 2012, 22, 1385
20. 0.3As Single Quantum Wells Appl. Phys. Lett. 1992, 61, 1411
21. Li, Y.; Lu, Y.; Shen, H.; Wraback, M.; Brown, M. G.; Schurman, M.; Koszi, L.; Stall, R. A. Temperature Dependence of Energy Gap in GaN Thin Film Studied by Thermomodulation Appl. Phys. Lett. 1997, 70, 2458
22. Heitz, R.; Mukhametzhanov, I.; Stier, O.; Madhukar, A.; Bimberg, D. Enhanced Polar Exciton-LO-Phonon Interaction in Quantum Dots Phys. Rev. Lett. 1999, 83, 4654
23. Najmaei, S.; Zou, X.; Er, D.; Li, J.; Jin, Z.; Gao, W.; Zhang, Q.; Park, S.; Ge, L.; Lei, S.; Kono, J.; Shenoy, V. B.; Yakobson, B. I.; George, A.; Ajayan, P. M.; Lou, J. Tailoring the Physical Properties of Molebdenum Disulfide Monolayer by Control of Interficial Chemistry Nano Lett. 2014, 14, 1354
24. Tarucha, S.; Okamoto, H.; Iwasa, Y.; Miura, N. Exciton Binding Energy in GaAs Quantum Wells Deduced from Magneto-Optical Absorption Measurement Solid State Commun. 1984, 52, 815
25. Greene, R. L.; Bajaj, K. K. Binding Energies of Wannier Excitons in GaAs-GaAlAs Quantum Well Structures Solid State Commun. 1983, 45, 831
26. Berkelbach, T. C.; Hybertsen, M. S.; Reichman, D. R. Theory of Neutral and Charged Excitons in Monolayer Transition Metal Dichalcogenides Phys. Rev. B 2013, 88, 045318
27. 2 Phys. Rev. B 2013, 87, 155304
28. Castellanos-Gomez, A.; Agrait, N.; Rubio-Bollinger, G. Optical Identification of Atomically Thin Dichalcogenide Crystal Appl. Phys. Lett. 2010, 96, 213116
29. Ni, X.; Lee, J.; Wu, M.; Li, X.; Shimada, R.; Özgür, Ü.; Baski, A. A.; Morkoç, H.; Paskova, T.; Mulholland, G.; Evans, K. R. Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN Appl. Phys. Lett. 2009, 95, 101106
30. 1-y double heterostructure grown on InP substrates J. Appl. Phys. 2003, 94, 1738
31. Landsberg, P. T. Recombination in Semiconductors; Cambridge University Press: Cambridge, UK, 1991; p 253.
32. Cragg, G. E.; Efros, A. L. Suppression of Auger Processes in Confined Structures Nano Lett. 2010, 10, 313
33. Varshni, Y. P. Band-to-Band Radiative Recombination in Groups IV, VI, and III-V Semiconductors Phys. Status Solidi 1967, 19, 459
34. Olshansky, R.; Su, C. B.; Manning, J.; Powazinik, W. Measurement of Radiative and Nonradiative Recombination Rates in InGaAsP and AlGaAs Light Sources J. Quantum Electron. 1984, 20, 838
35. Shen, Y. C.; Mueller, G. O.; Watanabe, S.; Garder, N. F.; Munkholm, A.; Krames, M. R. Auger Recombination in InGaN by Photoluminescence Appl. Phys. Lett. 2007, 91, 141101
36. Fehse, B.; Tomić, S.; Adams, A. R.; Sweeney, S. J.; O'Reilly, E. P.; Andreev, A.; Riechert, H. A Quantitative Study of Radiative, Auger, and Defect Related Recombination processes in 1.3 μm GaInNAs-Based Quantum-Well Lasers IEEE J. Sel. Top. Quantum Electron. 2002, 8, 801
37. Martinez-Pastor, J.; Vinattieri, A.; Carraresi, L.; Colocci, M.; Roussignol, Ph. Temperature Dependence of Exciton Lifetimes in GaAs/AlGaAs Single Quantum Wells Phys. Rev. B 1993, 47, 10456