SCOPUS 정보 검색 플랫폼

Volumn 4, Issue 12, 2016, Pages 2382-2389

Organic-inorganic hybrid semiconductor thin films deposited using molecular-atomic layer deposition (MALD)

(9) Huang, Jie a Zhang, Hengji a Lucero, Antonio a Cheng, Lanxia a Kc, Santosh a Wang, Jian a Hsu, Julia a Cho, Kyeongjae a Kim, Jiyoung a

a The University of Texas at Dallas (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; CMOS INTEGRATED CIRCUITS; DENSITY FUNCTIONAL THEORY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYBRID MATERIALS; INTERFACES (MATERIALS); PERTURBATION TECHNIQUES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET VISIBLE SPECTROSCOPY;

FIELD-EFFECT MOBILITIES; HALL EFFECT MEASUREMENT; LOW DEPOSITION TEMPERATURE; MANY BODY PERTURBATION THEORY; ORGANIC-INORGANIC HYBRID; SELF-LIMITING GROWTHS; SEMICONDUCTING BEHAVIOR; SEMICONDUCTOR THIN FILMS;

DEPOSITION;

EID: 84961644769 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c5tc03714j Document Type: Article

Times cited : (16)

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