Contact properties of high-mobility, air-stable, low-voltage organic n-channel thin-film transistors based on a naphthalene tetracarboxylic diimide

Applied Physics Letters

Volumn 102, Issue 23, 2013, Pages

  Rodel R ^a   Letzkus, F ^b   Zaki, T ^b,c   Burghartz, J N ^b,c   Kraft, U ^a   Zschieschang, U ^a   Kern, K ^a,d   Klauk, H ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b Institut fur Mikroelektronik Stuttgart   (Germany)

^c UNIVERSITY OF STUTTGART   (Germany)

^d EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT PROPERTIES; CONTACT RESISTIVITIES; FLEXIBLE PLASTIC SUBSTRATES; NAPHTHALENE DIIMIDE; NAPHTHALENE TETRACARBOXYLIC DIIMIDE; ORGANIC TRANSISTOR; RING OSCILLATOR; TRANSMISSION-LINE MEASUREMENTS;

CONTACT RESISTANCE; ELECTRON MOBILITY; NAPHTHALENE;

AIR MOBILITY;

EID: 84879115260     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4811127     Document Type: Article

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