Design, synthesis, and characterization of ladder-type molecules and polymers. air-stable, solution-processable n-channel and ambipolar semiconductors for thin-film transistors via experiment and theory

Journal of the American Chemical Society

Volumn 131, Issue 15, 2009, Pages 5586-5608

  Usta, Hakan ^a   Risko, Chad ^a   Wang, Zhiming ^a   Huang, Hui ^a   Deliomeroglu, Murat K ^a   Zhukhovitskiy, Aleksandr ^a   Facchetti, Antonio ^a   Marks, Tobin J ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

[CARBONYL; AFM; AIR STABILITY; AIR-STABLE; ALKYL CHAIN; AMBIPOLAR; AMBIPOLAR SEMICONDUCTOR; BUILDING BLOCK; CARRIER ELECTRONS; CHARGE TRANSPORT; COHESIVE FORCE; CORE SIZE; CRYSTALLINITIES; DENSITY FUNCTIONAL THEORY CALCULATIONS; DEVICE PERFORMANCE; DICYANOVINYLENE; ELECTRON-DEFICIENT; FLUORENE; FRONTIER MOLECULAR ORBITALS; KINETIC BARRIER; LUMO ENERGY; MAJORITY CARRIERS; N-CHANNEL; NEW HIGH; OVERPOTENTIAL; P-N JUNCTION; P-TYPE; PHYSICOCHEMICAL PROPERTY; POLYMERIC SEMICONDUCTORS; PROCESSABILITY; PROCESSABLE; REGIOCHEMISTRY; SINGLE CRYSTAL X-RAY DIFFRACTION; SOLUTION-CAST; SOLUTION-PROCESSED; THIN FILM MICROSTRUCTURES; VOLTAMMETRY MEASUREMENTS;

BIPOLAR TRANSISTORS; COPOLYMERIZATION; COPOLYMERS; CYCLIC VOLTAMMETRY; DENSITY FUNCTIONAL THEORY; DEPOSITION; DIFFRACTION; ELECTRON MOBILITY; ELECTRONS; MELTING POINT; MICROSTRUCTURE; MOLECULAR ORBITALS; POLYMERS; SEMICONDUCTOR JUNCTIONS; SYSTEM STABILITY; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; THIOPHENE; VACUUM DEPOSITION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING ORGANIC COMPOUNDS;

ALKYL GROUP; CARBONYL DERIVATIVE; COPOLYMER; MALONONITRILE; POLYMER; THIOPHENE;

AIR; ARTICLE; CHEMICAL STRUCTURE; CRYSTAL; CYCLIC POTENTIOMETRY; ELECTRON; ENERGY TRANSFER; FILM; FORCE; MELTING POINT; MOLECULAR INTERACTION; MOLECULAR SIZE; MOLECULE; PHYSICAL CHEMISTRY; RNA TRANSLATION; SEMICONDUCTOR; SOLUTION AND SOLUBILITY; SYNTHESIS; X RAY DIFFRACTION;

EID: 67849083148     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja809555c     Document Type: Article

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