Mobility overestimation due to gated contacts in organic field-effect transistors

Nature Communications

Volumn 7, Issue , 2016, Pages

  Bittle, Emily G ^a,b   Basham, James I ^a,c   Jackson, Thomas N ^c   Jurchescu, Oana D ^b   Gundlach, David J ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b WAKE FOREST UNIVERSITY   (United States)

^c The Pennsylvania State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METAL OXIDE; NAPHTHACENE DERIVATIVE; RUBRENE; SILICON DIOXIDE;

ELECTRICAL PROPERTY; EQUIPMENT; MAGNITUDE; METAL; MOBILITY; OXIDE; SPECTROSCOPY;

ARTICLE; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; MATHEMATICAL ANALYSIS; MATHEMATICAL MODEL; SEMICONDUCTOR; CHEMISTRY; MATERIALS TESTING; TRANSISTOR;

DIELECTRIC SPECTROSCOPY; MATERIALS TESTING; NAPHTHACENES; SILICON DIOXIDE; TRANSISTORS, ELECTRONIC;

EID: 84960539684     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms10908     Document Type: Article

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