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Volumn 96, Issue 20, 2010, Pages

Probing stress effects in single crystal organic transistors by scanning Kelvin probe microscopy

(8) Teague, Lucile C a Jurchescu, Oana D b,c,e Richter, Curt A b Subramanian, Sankar d Anthony, John E d Jackson, Thomas N c Gundlach, David J b Kushmerick, James G b

a SAVANNAH RIVER NATIONAL LABORATORY (United States)

b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

c PENNSYLVANIA STATE UNIVERSITY (United States)

d UNIVERSITY OF KENTUCKY (United States)

e WAKE FOREST UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSPORT; CONTACT EFFECT; DEVICE PERFORMANCE; DIRECT MEASUREMENT; ORGANIC TRANSISTOR; SCANNING KELVIN PROBE MICROSCOPY; STRESS EFFECTS; TIME PERIODS;

PROBES;

SINGLE CRYSTALS;

EID: 77952979516 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3389493 Document Type: Article

Times cited : (18)

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- See supplementary material at http://dx.doi.org/10.1063/1.3389493 E-APPLAB-96-043015 for transport measurements before and after repeated operation in the "ON" state as well as SKPM measurements of device 100 K.

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