Investigation of bottom-contact organic field effect transistors by two-dimensional device modeling

Journal of Applied Physics

Volumn 93, Issue 7, 2003, Pages 4017-4022

  Li, T ^a   Ruden, P P ^a   Campbell, I H ^b   Smith, D L ^b  

^a UNIVERSITY OF MINNESOTA   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; HOLE MOBILITY; PERMITTIVITY; POISSON EQUATION; SCHOTTKY BARRIER DIODES; SILICON;

GATE INSULATORS;

FIELD EFFECT TRANSISTORS;

EID: 0037391004     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1558998     Document Type: Article

References (14)

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