Current saturation and Coulomb interactions in organic single-crystal transistors

New Journal of Physics

Volumn 10, Issue , 2008, Pages

  Fratinil, S ^a   Xie, H ^b   Hulea, I N ^b   Ciuchi, S ^c   Morpurgo, A F ^b  

^a CNRS   (France)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c UNIVERSITY OF L'AQUILA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; ACTIVATION ENERGY; CHARGE CARRIERS; CHEMICAL ACTIVATION; CIVIL AVIATION; CURRENT DENSITY; ELECTRIC NETWORK ANALYSIS; FIELD EFFECT TRANSISTORS; MESFET DEVICES; MODAL ANALYSIS; POWDERS; TRANSISTORS;

CARRIER (CO); CARRIER DENSITY; CRYSTAL FIELD (CF); CURRENT SATURATION; DENSITY OF CHARGE; ELECTRONIC TRANSPORTS; EXPERIMENTAL OBSERVATIONS; MICROSCOPIC MODELING; ORGANIC FETS; RUBRENE; SINGLE CRYSTAL TRANSISTORS;

CARRIER TRANSPORT;

EID: 45849148144     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/10/3/033031     Document Type: Article

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