Intrinsic difference in Schottky barrier effect for device configuration of organic thin-film transistors

Organic Electronics

Volumn 15, Issue 7, 2014, Pages 1571-1578

  Noda, Kei ^a   Wada, Yasuo ^a   Toyabe, Toru ^b  

^a KEIO UNIVERSITY   (Japan)

^b TOYO UNIVERSITY   (Japan)

Author keywords

Contact area limited doping; Device simulation; Organic thin film transistor; Schottky barrier; Thermionic field emission

Indexed keywords

BORON CARBIDE; CARRIER CONCENTRATION; CHEMICAL SENSORS; FIELD EFFECT TRANSISTORS; FIELD EMISSION; OHMIC CONTACTS; PHOTOTRANSISTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS; THIN FILMS;

CONTACT AREAS; DEVICE SIMULATIONS; ORGANIC THIN FILM TRANSISTORS; SCHOTTKY BARRIERS; THERMIONIC FIELD EMISSION;

THIN FILM CIRCUITS;

EID: 84900490600     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2014.04.018     Document Type: Article

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