Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes

IEEE Electron Device Letters

Volumn 22, Issue 12, 2001, Pages 571-573

  Gundlach, David J ^a,b   Jia, Lili ^b   Jackson, Thomas N ^a,b  

^a IEEE   (United States)

^b The Pennsylvania State University   (United States)

Author keywords

Flat panel displays; Molecular electronics; Thin film transistors

Indexed keywords

DRAIN CONTACTS; DRAIN ELECTRODES;

CHARGE CARRIERS; ELECTRODES; ELECTROLUMINESCENCE; FLAT PANEL DISPLAYS; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SPUTTER DEPOSITION; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 0035691751     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.974580     Document Type: Article

References (13)

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5. High-mobility, low voltage organic thin film transistors
6. 2/V·s
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8. Two-dimensional electrical transport of pentacene thin films doped with iodine
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