2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Applied Physics Letters

Volumn 108, Issue 8, 2016, Pages

  Roy, Tania ^a,b,c   Tosun, Mahmut ^a,b,c   Hettick, Mark ^a,b,c   Ahn, Geun Ho ^a,b,c   Hu, Chenming ^a   Javey, Ali ^a,b,c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRON TUNNELING; ENERGY EFFICIENCY; GATE DIELECTRICS; HETEROJUNCTIONS; RECONFIGURABLE HARDWARE; VAN DER WAALS FORCES;

BAND TO BAND TUNNELING; FUTURE GENERATIONS; HETEROJUNCTION DEVICES; NEGATIVE DIFFERENTIAL RESISTANCES; SUBTHRESHOLD SWING; TUNNELING BARRIER; TUNNELING FIELD-EFFECT TRANSISTORS; TWO-DIMENSIONAL MATERIALS;

FIELD EFFECT TRANSISTORS;

EID: 84959228986     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4942647     Document Type: Article

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