Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET with HSQ Mechanical Support

IEEE Transactions on Nanotechnology

Volumn 14, Issue 3, 2015, Pages 580-584

  Zeng, Yuping ^a   Kuo, Chien I ^b   Hsu, Chingyi ^b   Najmzadeh, Mohammad ^a   Sachid, Angada ^a   Kapadia, Rehan ^a   Yeung, Chunwing ^a   Chang, Edward ^b   Hu, Chenming ^a   Javey, Ali ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Heterojunction; Nanofabrication; TCAD simulation; Tunneling barrier; Type III (broken gap) band alignment; Vertical in line Tunnel FET

Indexed keywords

ALIGNMENT; ELECTRON BEAM LITHOGRAPHY; ELECTRONIC DESIGN AUTOMATION; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; NANOTECHNOLOGY; SEMICONDUCTOR QUANTUM WELLS;

BAND ALIGNMENTS; DEVICE SIMULATIONS; HYDROGEN SILSESQUIOXANE; MECHANICAL SUPPORT STRUCTURES; SUBTHRESHOLD SLOPE; TCAD SIMULATION; TUNNEL FET; TUNNELING BARRIER;

ELECTRON TUNNELING;

EID: 84929208250     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2015.2419232     Document Type: Article

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