Band lineup of a SnS2/SnSe2/SnS2 semiconductor quantum well structure prepared by van der Waals epitaxy

Journal of Applied Physics

Volumn 85, Issue 9, 1999, Pages 6550-6556

  Schlaf, R ^a,c   Pettenkofer, C ^c   Jaegermann, W ^b,c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^c HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; HETEROJUNCTIONS; INTERFACES (MATERIALS); SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

QUANTUM DIPOLES; TIN SELENIDE; TIN SULFIDE; VAN DER WAALS EPITAXY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032607882     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370160     Document Type: Article

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