Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping

ACS Nano

Volumn 9, Issue 11, 2015, Pages 11398-11407

  Kepaptsoglou, Demie ^a   Hardcastle, Trevor P ^b   Seabourne, Che R ^b   Bangert, Ursel ^c   Zan, Recep ^c   Amani, Julian Alexander ^d   Hofsäss, Hans ^d   Nicholls, Rebecca J ^e   Brydson, Rik M D ^b   Scott, Andrew J ^b   Ramasse, Quentin M ^a  

^a SUPERSTEM LABORATORY   (United Kingdom)

^b UNIVERSITY OF LEEDS   (United Kingdom)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

^d UNIVERSITY OF GÖTTINGEN   (Germany)

^e UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

ab initio calculations; DFT; doping; EELS; electronic structure; graphene; STEM

Indexed keywords

CALCULATIONS; CHEMICAL BONDS; DENSITY FUNCTIONAL THEORY; DISSOCIATION; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ELECTRONIC STRUCTURE; ENERGY DISSIPATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION IMPLANTATION; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

AB INITIO CALCULATIONS; ANTI-BONDING STATE; DFT; ELECTRON ENERGY LOSS; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SPECTROSCOPIC SIGNATURES; STEM; STRUCTURE MODIFICATION;

GRAPHENE;

EID: 84948407574     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b05305     Document Type: Article

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