Stability and spectroscopy of single nitrogen dopants in graphene at elevated temperatures

ACS Nano

Volumn 8, Issue 11, 2014, Pages 11806-11815

  Warner, Jamie H ^a   Lin, Yung Chang ^b   He, Kuang ^a   Koshino, Masanori ^b   Suenaga, Kazu ^b  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Aberration corrected; EELS; Graphene; N doped; Nitrogen; STEM

Indexed keywords

ATOMS; CHEMICAL BONDS; DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ENERGY DISSIPATION; GRAPHENE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NITROGEN; SCANNING ELECTRON MICROSCOPY; STEM (SCIENCE, TECHNOLOGY, ENGINEERING AND MATHEMATICS);

ABERRATION-CORRECTED; ATOMIC RESOLUTION; BOND RECONSTRUCTION; DENSITY FUNCTIONAL THEORY SIMULATIONS; ELEVATED TEMPERATURE; GRAPHENE LATTICES; N-DOPED; SUBSTITUTIONAL ATOMS;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 84912569418     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5054798     Document Type: Article

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