Silicon-carbon bond inversions driven by 60-kev electrons in graphene

Physical Review Letters

Volumn 113, Issue 11, 2014, Pages

  Susi, Toma ^a   Kotakoski, Jani ^a,b   Kepaptsoglou, Demie ^c   Mangler, Clemens ^a   Lovejoy, Tracy C ^d   Krivanek, Ondrej L ^d   Zan, Recep ^e,f   Bangert, Ursel ^e,g   Ayala, Paola ^a   Meyer, Jannik C ^a   Ramasse, Quentin ^c  

^a UNIVERSITY OF VIENNA   (Austria)

^b UNIVERSITY OF HELSINKI   (Finland)

^c SUPERSTEM LABORATORY   (United Kingdom)

^d Nion Co Kirkland   (United States)

^e UNIVERSITY OF MANCHESTER   (United Kingdom)

^f NIGDE UNIVERSITY   (Turkey)

^g UNIVERSITY OF LIMERICK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRON IRRADIATION; STOCHASTIC SYSTEMS;

ELECTRON IMPACT; FIRST-PRINCIPLES SIMULATIONS; REVERSE PROCESS; SILICON CARBON BOND; STOCHASTIC ANALYSIS; STRUCTURAL MODIFICATIONS; TIME RESOLUTION; TWO-DIMENSIONAL MATERIALS;

GRAPHENE;

EID: 84925047460     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.113.115501     Document Type: Article

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