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Volumn 15, Issue 8, 2015, Pages 5110-5115

Doping of Graphene by Low-Energy Ion Beam Implantation: Structural, Electronic, and Transport Properties

Author keywords

boron doped graphene; Graphene; ion implantation; magnetotransport; nitrogen doped graphene; scanning tunneling microscopy spectroscopy

Indexed keywords

DOPING (ADDITIVES); GALVANOMAGNETIC EFFECTS; ION BEAMS; ION IMPLANTATION; IONS; NITROGEN; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; TEMPERATURE; TRANSPORT PROPERTIES;

EID: 84939249061     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b01280     Document Type: Article
Times cited : (129)

References (35)
  • 15
    • 84881167566 scopus 로고    scopus 로고
    • Geim, A. K.; Grigorieva, I. V. Nature 2013, 499 (7459) 419-425 10.1038/nature12385
    • (2013) Nature , vol.499 , Issue.7459 , pp. 419-425
    • Geim, A.K.1    Grigorieva, I.V.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.