A 3N rule for the electronic properties of doped graphene

Nanotechnology

Volumn 24, Issue 22, 2013, Pages

  Zhou, Ye Cheng ^a   Zhang, Hao Li ^a   Deng, Wei Qiao ^b  

^a LANZHOU UNIVERSITY   (China)

^b DALIAN INSTITUTE OF CHEMICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIRAC POINT; DOPANT CONCENTRATIONS; ELECTRONIC APPLICATION; FIRST PRINCIPLES; GRAPHENE SHEETS;

GRAPHENE;

ELECTRONIC PROPERTIES;

EID: 84877730925     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/22/225705     Document Type: Article

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