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Volumn 9, Issue 1, 2015, Pages 670-678

Electronic interaction between nitrogen atoms in doped graphene

Author keywords

DFT; graphene; nitrogen doping; STM; STS; tight binding

Indexed keywords

ATOMS; BINDING ENERGY; BINDING SITES; CHEMICAL BONDS; DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; NITROGEN; POINT DEFECTS; SCANNING TUNNELING MICROSCOPY;

EID: 84921709066     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn506074u     Document Type: Article
Times cited : (84)

References (56)
  • 1
    • 84861602854 scopus 로고    scopus 로고
    • Towards New Graphene Materials: Doped Graphene Sheets and Nanoribbons
    • Lv, R.; Terrones, M. Towards New Graphene Materials: Doped Graphene Sheets and Nanoribbons Mater. Lett. 2012, 78, 209-218
    • (2012) Mater. Lett. , vol.78 , pp. 209-218
    • Lv, R.1    Terrones, M.2
  • 2
    • 48949087342 scopus 로고    scopus 로고
    • Giant Phonon-Induced Conductance in Scanning Tunnelling Spectroscopy of Gate-Tunable Graphene
    • Zhang, Y.; Brar, V. W.; Wang, F.; Girit, C.; Yayon, Y.; Panlasigui, M.; Zettl, A.; Crommie, M. F. Giant Phonon-Induced Conductance in Scanning Tunnelling Spectroscopy of Gate-Tunable Graphene Nat. Phys. 2008, 4, 627-630
    • (2008) Nat. Phys. , vol.4 , pp. 627-630
    • Zhang, Y.1    Brar, V.W.2    Wang, F.3    Girit, C.4    Yayon, Y.5    Panlasigui, M.6    Zettl, A.7    Crommie, M.F.8
  • 3
    • 50249122647 scopus 로고    scopus 로고
    • Metal to Insulator Transition in Epitaxial Graphene Induced by Molecular Doping
    • Zhou, S. Y.; Siegel, D. A.; Fedorov, A. V.; Lanzara, A. Metal to Insulator Transition in Epitaxial Graphene Induced by Molecular Doping Phys. Rev. Lett. 2008, 101, 086402
    • (2008) Phys. Rev. Lett. , vol.101 , pp. 086402
    • Zhou, S.Y.1    Siegel, D.A.2    Fedorov, A.V.3    Lanzara, A.4
  • 7
    • 84860736699 scopus 로고    scopus 로고
    • Review on Recent Progress in Nitrogen-Doped Graphene: Synthesis, Characterization, and Its Potential Applications
    • Wang, H.; Maiyalagan, T.; Wang, X. Review on Recent Progress in Nitrogen-Doped Graphene: Synthesis, Characterization, and Its Potential Applications ACS Catal. 2012, 2, 781-794
    • (2012) ACS Catal. , vol.2 , pp. 781-794
    • Wang, H.1    Maiyalagan, T.2    Wang, X.3
  • 12
    • 84879403681 scopus 로고    scopus 로고
    • Nitrogen-Doped Graphene Nanoplatelets from Simple Solution Edge-Functionalization for n-Type Field-Effect Transistors
    • Chang, D. W.; Lee, E. K.; Park, E. Y.; Yu, H.; Choi, H.-J.; Jeon, I.-Y.; Sohn, G.-J.; Shin, D.; Park, N.; Oh, J. H. et al. Nitrogen-Doped Graphene Nanoplatelets from Simple Solution Edge-Functionalization for n-Type Field-Effect Transistors J. Am. Chem. Soc. 2013, 135, 8981-8988
    • (2013) J. Am. Chem. Soc. , vol.135 , pp. 8981-8988
    • Chang, D.W.1    Lee, E.K.2    Park, E.Y.3    Yu, H.4    Choi, H.-J.5    Jeon, I.-Y.6    Sohn, G.-J.7    Shin, D.8    Park, N.9    Oh, J.H.10
  • 14
    • 84887230400 scopus 로고    scopus 로고
    • Nitrogen-Self-Doped Graphene as a High Capacity Anode Material for Lithium-Ion Batteries
    • He, C.; Wang, R.; Fu, H.; Shen, P. K. Nitrogen-Self-Doped Graphene as a High Capacity Anode Material for Lithium-Ion Batteries J. Mater. Chem. A 2013, 1, 14586-14591
    • (2013) J. Mater. Chem. A , vol.1 , pp. 14586-14591
    • He, C.1    Wang, R.2    Fu, H.3    Shen, P.K.4
  • 24
    • 84904765297 scopus 로고    scopus 로고
    • Achieving High-Quality Single-Atom Nitrogen Doping of Graphene/SiC(0001) by Ion Implantation and Subsequent Thermal Stabilization
    • Telychko, M.; Mutombo, P.; Ondráček, M.; Hapala, P.; Bocquet, F. C.; Kolorenč, J.; Vondráček, M.; Jelínek, P.; Švec, M. Achieving High-Quality Single-Atom Nitrogen Doping of Graphene/SiC(0001) by Ion Implantation and Subsequent Thermal Stabilization ACS Nano 2014, 8, 7318-7324
    • (2014) ACS Nano , vol.8 , pp. 7318-7324
    • Telychko, M.1    Mutombo, P.2    Ondráček, M.3    Hapala, P.4    Bocquet, F.C.5    Kolorenč, J.6    Vondráček, M.7    Jelínek, P.8    Švec, M.9
  • 25
    • 84864576576 scopus 로고    scopus 로고
    • Long-Range Interactions between Substitutional Nitrogen Dopants in Graphene: Electronic Properties Calculations
    • Lambin, P.; Amara, H.; Ducastelle, F.; Henrard, L. Long-Range Interactions between Substitutional Nitrogen Dopants in Graphene: Electronic Properties Calculations Phys. Rev. B: Condens. Matter Mater. Phys. 2012, 86, 045448
    • (2012) Phys. Rev. B: Condens. Matter Mater. Phys. , vol.86 , pp. 045448
    • Lambin, P.1    Amara, H.2    Ducastelle, F.3    Henrard, L.4
  • 27
    • 77955526852 scopus 로고    scopus 로고
    • STM Simulations of Nitrogen and Boron Doped Graphene and Single-Walled Carbon Nanotubes
    • Zheng, B.; Hermet, P.; Henrard, L. STM Simulations of Nitrogen and Boron Doped Graphene and Single-Walled Carbon Nanotubes ACS Nano 2010, 7, 4165
    • (2010) ACS Nano , vol.7 , pp. 4165
    • Zheng, B.1    Hermet, P.2    Henrard, L.3
  • 28
    • 42049106021 scopus 로고    scopus 로고
    • Rotational Disorder in Few-Layer Graphene Films on 6H-SiC(000-1): A Scanning Tunneling Microscopy Study
    • Varchon, F.; Mallet, P.; Magaud, L.; Veuillen, J.-Y. Rotational Disorder in Few-Layer Graphene Films on 6H-SiC(000-1): A Scanning Tunneling Microscopy Study Phys. Rev. B: Condens. Matter Mater. Phys. 2008, 77, 165415
    • (2008) Phys. Rev. B: Condens. Matter Mater. Phys. , vol.77 , pp. 165415
    • Varchon, F.1    Mallet, P.2    Magaud, L.3    Veuillen, J.-Y.4
  • 37
    • 84876014564 scopus 로고    scopus 로고
    • Electronic and Transport Properties of Unbalanced Sublattice N-Doping in Graphene
    • Lherbier, A.; Botello-Mendez, A. R.; Charlier, J.-C. Electronic and Transport Properties of Unbalanced Sublattice N-Doping in Graphene Nano Lett. 2013, 13, 1446-1450
    • (2013) Nano Lett. , vol.13 , pp. 1446-1450
    • Lherbier, A.1    Botello-Mendez, A.R.2    Charlier, J.-C.3
  • 39
    • 84884383360 scopus 로고    scopus 로고
    • Electronic Structure of Vacancy Resonant States in Graphene: A Critical Review of the Single-Vacancy Case
    • Ducastelle, F. Electronic Structure of Vacancy Resonant States in Graphene: A Critical Review of the Single-Vacancy Case Phys. Rev. B: Condens. Matter Mater. Phys. 2013, 88, 075413
    • (2013) Phys. Rev. B: Condens. Matter Mater. Phys. , vol.88 , pp. 075413
    • Ducastelle, F.1
  • 40
    • 0001156581 scopus 로고
    • Energy Spectrum Structure and Quantum States of Disordered Condensed Systems
    • Lifshitz, I. Energy Spectrum Structure and Quantum States of Disordered Condensed Systems Sov. Phys. Usp. 1965, 7, 549-573
    • (1965) Sov. Phys. Usp. , vol.7 , pp. 549-573
    • Lifshitz, I.1
  • 44
    • 84855459818 scopus 로고    scopus 로고
    • Formation, Stabilities, and Electronic Properties of Nitrogen Defects in Graphene
    • Fujimoto, Y.; Saito, S. Formation, Stabilities, and Electronic Properties of Nitrogen Defects in Graphene Phys. Rev. B: Condens. Matter Mater. Phys. 2011, 84, 245446
    • (2011) Phys. Rev. B: Condens. Matter Mater. Phys. , vol.84 , pp. 245446
    • Fujimoto, Y.1    Saito, S.2
  • 47
    • 0033353970 scopus 로고    scopus 로고
    • High-Temperature Graphitization of the 6H-SiC (0001) Face
    • Forbeaux, I.; Themlin, J.-M.; Debever, J.-M. High-Temperature Graphitization of the 6H-SiC (0001) Face Surf. Sci. 1999, 442, 9
    • (1999) Surf. Sci. , vol.442 , pp. 9
    • Forbeaux, I.1    Themlin, J.-M.2    Debever, J.-M.3
  • 50
    • 67649199539 scopus 로고    scopus 로고
    • Epitaxial Graphene on SiC(0001) and SiC(000-1): From Surface Reconstructions to Carbon Electronics
    • Starke, U.; Riedl, C. Epitaxial Graphene on SiC(0001) and SiC(000-1): From Surface Reconstructions to Carbon Electronics J. Phys.: Condens. Matter 2009, 21, 134016
    • (2009) J. Phys.: Condens. Matter , vol.21 , pp. 134016
    • Starke, U.1    Riedl, C.2
  • 52
    • 26144450583 scopus 로고
    • Self-Interaction Correction to Density-Functional Approximations for Many-Electron Systems
    • Perdew, J. P.; Zunger, A. Self-Interaction Correction to Density-Functional Approximations for Many-Electron Systems Phys. Rev. B: Condens. Matter Mater. Phys. 1981, 23, 5048-5079
    • (1981) Phys. Rev. B: Condens. Matter Mater. Phys. , vol.23 , pp. 5048-5079
    • Perdew, J.P.1    Zunger, A.2
  • 55
    • 1842816907 scopus 로고
    • Special Points for Brillouin-Zone Integrations
    • Monkhorst, H. J.; Pack, J. D. Special Points for Brillouin-Zone Integrations Phys. Rev. B: Solid State 1976, 13, 5188-5192
    • (1976) Phys. Rev. B: Solid State , vol.13 , pp. 5188-5192
    • Monkhorst, H.J.1    Pack, J.D.2
  • 56
    • 18344373200 scopus 로고
    • Theory and Application for the Scanning Tunneling Microscope
    • Tersoff, J.; Hamann, D. R. Theory and Application for the Scanning Tunneling Microscope Phys. Rev. Lett. 1983, 50, 1998-2001
    • (1983) Phys. Rev. Lett. , vol.50 , pp. 1998-2001
    • Tersoff, J.1    Hamann, D.R.2


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