Epitaxial growth of boron-doped graphene by thermal decomposition of B 4C

Journal of Physics Condensed Matter

Volumn 24, Issue 31, 2012, Pages

  Norimatsu, Wataru ^a,b   Hirata, Koichiro ^a   Yamamoto, Yuta ^a   Arai, Shigeo ^a   Kusunoki, Michiko ^a,b  

^a NAGOYA UNIVERSITY   (Japan)

^b JAPAN FINE CERAMICS CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED GRAPHENE; DIFFRACTION TECHNIQUES; ELECTRON ENERGY LOSS; GRAPHENE LAYERS; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; SURFACE ORIENTATION; UNIT CELLS;

DECOMPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

GRAPHENE;

EID: 84864185895     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/24/31/314207     Document Type: Article

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