Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride

ACS Nano

Volumn 9, Issue 9, 2015, Pages 8953-8959

  Petrone, Nicholas ^a   Chari, Tarun ^a   Meric, Inanc ^a   Wang, Lei ^a   Shepard, Kenneth L ^a   Hone, James ^a  

^a Department of Earth and Environmental Sciences   (United States)

Author keywords

boron nitride; FET; flexible electronics; graphene; radio frequency

Indexed keywords

AMPLIFICATION; BALLOONS; BORON NITRIDE; CUTOFF FREQUENCY; ELECTRIC RESISTANCE; FABRICATION; FIELD EFFECT TRANSISTORS; FLEXIBLE ELECTRONICS; NITRIDES; RADIO WAVES;

ELECTRONIC CHARACTERISTICS; FET; GRAPHENE FIELD EFFECT TRANSISTOR (GFETS); GRAPHENE FIELD-EFFECT TRANSISTORS; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); RADIO FREQUENCIES; SELF ALIGNED FABRICATION;

GRAPHENE;

EID: 84942314368     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b02816     Document Type: Article

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